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RLT808-150GS fiches techniques PDF

Roithner - Laser Diode

Numéro de référence RLT808-150GS
Description Laser Diode
Fabricant Roithner 
Logo Roithner 





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RLT808-150GS fiche technique
ROITHNER LASERTECHNIK
SCHOENBRUNNER STRASSE 7, VIENNA, AUSTRIA
TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44
[email protected] www.roithner-laser.com
RLT808-150GS TECHNICAL DATA
High Power Infrared Laser Diode
Lasing mode structure: single mode
Lasing wavelength: typ. 808 nm
Optical power: 150 mW
Package: 9 mm (SOT-148)
PIN CONNECTION:
NOTE!
LASERDIODE
MUST BE COOLED!
1) Laser diode anode
2) Laser diode cathode and photodiode cathode
3) Photodiode anode
Absolute Maximum Ratings (Tc = 25°C)
CHARACTERISTIC
SYMBOL
Optical Output Power
LD Reverse Voltage
PD Reverse Voltage
Operating Temperature
Storage Temperature
Po
VR(LD)
VR(PD)
TC
TSTG
RATING
170
1.5
10
-20 .. +40
-40 .. +70
UNIT
mW
V
V
°C
°C
Optical-Electrical Characteristics (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION
Emitting Aperture
A
cw
Optical Output Power
Threshold Current
Operation Current
Forward Voltage
Lasing Wavelength
Spectral Width FWHM
Po
Ith
Iop
Uf
λp
∆λ
single mode
cw
Po = 150 mW
Po = 150 mW
Po = 150 mW
Po = 150 mW
Beam Divergence
Beam Divergence
Monitor Current
θ// Po = 150 mW
θPo = 150 mW
Im Po = 150 mW
MIN
40
170
1.8
803
100
TYP
1x5
150
50
180
1.9
808
0.2
25
40
500
MAX
60
190
2.0
810
0.3
1500
UNIT
µm²
mW
mA
mA
V
nm
nm
°
°
µA
Free Datasheet http://www.datasheet4u.com/

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