DataSheetWiki


RLT6650GLI fiches techniques PDF

Roithner - Laser Diode

Numéro de référence RLT6650GLI
Description Laser Diode
Fabricant Roithner 
Logo Roithner 





1 Page

No Preview Available !





RLT6650GLI fiche technique
ROITHNER LASERTECHNIK
A-1040 VIENNA, SCHOENBRUNNER STRASSE 7, AUSTRIA
TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44
e-mail: [email protected] http://www.roithner-laser.com
RLT6650GLI TECHNICAL DATA
High Power Visible Laserdiode
Structure: High Efficiency MOVCD Quantum Well Design
Lasing wavelength: 655 nm typ. multimode
Output power: 50 mW
NOTE!
Package: 9 mm
LASERDIODE
MUST BE COOLED!
PIN CONNECTION:
1) Laser diode cathode
2) Laser diode anode and photodiode cathode
3) Photodiode anode
Absolute Maximum Ratings (Tc=25°C)
CHARACTERISTIC
SYMBOL
Optical Output Power
Po
LD Reverse Voltage
PD Reverse Voltage
VR(LD)
VR(PD)
Operating Temperature
Storage Temperature
TC
TSTG
RATING
60
2
30
-10 .. +40
-40 .. +85
UNIT
mW
V
V
°C
°C
Optical-Electrical Characteristics (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION
Threshold Current
Ith
cw
Operation Current Iop Po = 50 mW
Operation Voltage Vop Po = 50 mW
Slope Efficiency
η
cw
Lasing Wavelength
Beam Divergence
Beam Divergence
Lasing Aperture
Monitor Current
λp
θ//
θ
A
Im
Po = 50 mW
Po = 50 mW
Po = 50 mW
Po = 50 mW
Po = 50 mW
MIN TYP MAX
120 135
180 250
2.0 2.2 2.5
0.6 0.7 1.0
655 660
5 7 14
30 38 40
20x1
0.5 2.0
UNIT
mA
mA
V
W/A
nm
°
°
µm²
mA
Free Datasheet http://www.datasheet4u.com/

PagesPages 1
Télécharger [ RLT6650GLI ]


Fiche technique recommandé

No Description détaillée Fabricant
RLT6650GLI Laser Diode Roithner
Roithner

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche