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RLT6530G fiches techniques PDF

Roithner - Laser Diode

Numéro de référence RLT6530G
Description Laser Diode
Fabricant Roithner 
Logo Roithner 





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RLT6530G fiche technique
RLT6530G
Features
Index Guided MQW Structure
Wavelength : 655 nm (Typ.)
Optical Power : 30 mW CW
Threshold Current : 50 mA ( Typ. )
Standard Package : 9.0 mm Ø
Visible Laser Diode
ABSOLUTE MAXIMUM RATINGS ( Tc=25ºC )
DESCRIPTION
SYMBOL RATED VALUE
Optical Power (mW)
Po 30
Operation Temperature (ºC)
Top
-10 to +40
Storage Temperature (ºC) Tstg -40 to +85
LD Reverse Voltage (V)
VLDR
2
PD Reverse Voltage (V)
VPDR
30
OPTICAL AND ELECTRICAL CHARACTERISTICS ( Tc=25ºC )
DESCRIPTION
SYMBOL
MIN.
TYPICAL
Lasing Wavelength (nm)
λp 645 655
Threshold Current (mA)
Ith 30 50
Operation Current (mA)
Iop 60
80
Operation Voltage (V)
Vop 2.0
2.2
Monitor Current (µA)
Im 10
-
Slope Efficiency (mW/mA)
ç 0.3 0.4
Beam Divergence ¦ (º)
θ¦ 8 10
Beam Divergence (º)
θ⊥ 25 31
Astigmatism (µm)
As *** 11
MAX.
665
70
100
2.7
-
0.7
11
40
***
TEST CONDITION
Po=30 mW
Po=30 mW
Po=30 mW
Po=30 mW
Po=30mW, VR=5V
***
Po=30 mW
Po=30 mW
Po=30mW, NA=0.4
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