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RLT1550-20G fiches techniques PDF

Roithner - Infrared Laser Diode

Numéro de référence RLT1550-20G
Description Infrared Laser Diode
Fabricant Roithner 
Logo Roithner 





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RLT1550-20G fiche technique
ROITHNER LASERTECHNIK
A-1040 VIENNA, SCHOENBRUNNER STRASSE 7, AUSTRIA
TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44
e-mail: [email protected] http://www.roithner-laser.com
RLT1550-20G TECHNICAL DATA
High Power Infrared Laserdiode
Structure: GaInAsP/InP SQW structure
Lasing wavelength: 1550 nm, single mode
Typ. optical power: 20 mW
Package: 9 mm (SOT-148)
PIN CONNECTION:
1) Laser diode cathode
2) Laser diode anode and photodiode cathode
3) Photodiode anode
NOTE!
LASERDIODE
MUST BE COOLED!
Absolute Maximum Ratings (Tc=25°C)
CHARACTERISTIC
SYMBOL
Maximum LD Current
Optical Output Power
LD Reverse Voltage
PD Reverse Voltage
Operating Temperature
Storage Temperature
If
Po
VR(LD)
VR(PD)
TC
TSTG
RATING
200
40
1.5
6
-20 .. +40
-40 .. +85
UNIT
mA
mW
V
V
°C
°C
Optical-Electrical Characteristics (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION
Lasing Aperture
A
cw
Optical Output Power
Threshold Current
Po
Ith
cw
cw
Operation Current
Forward Voltage
Lasing Wavelength
Beam Divergence
Iop
Uf
λp
θ//
Po = 20 mW
Po = 20 mW
Po = 20 mW
Po = 20 mW
Beam Divergence θPo = 20 mW
Monitor Current
Im Po = 20 mW
MIN
1520
> 20
TYP
1x5
20
55
160
2
1550
25
40
100
MAX
1580
UNIT
µm²
mW
mA
mA
V
nm
°
°
µA
Free Datasheet http://www.datasheet4u.com/

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