|
|
Numéro de référence | RLT1060-100GS | ||
Description | High Power Infrared Laser Diode | ||
Fabricant | Roithner | ||
Logo | |||
ROITHNER LASERTECHNIK
SCHOENBRUNNER STRASSE 7, VIENNA, AUSTRIA
TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44
[email protected] www.roithner-laser.com
RLT1060-100GS TECHNICAL DATA
High Power Infrared Laser Diode
Lasing mode structure: single mode
Lasing wavelength: typ. 1060 nm
Optical power: 100 mW
Package: 9 mm (SOT-148)
PIN CONNECTION:
1) Photodiode cathode
2) Laser diode cathode and photodiode anode
3) Laser diode anode
NOTE!
LASERDIODE
MUST BE COOLED!
Absolute Maximum Ratings (Tc = 25°C)
CHARACTERISTIC
SYMBOL
Optical Output Power
LD Reverse Voltage
PD Reverse Voltage
Operating Temperature
Storage Temperature
Po
VR(LD)
VR(PD)
TC
TSTG
RATING
120
1.5
10
-20 .. +40
-40 .. +70
UNIT
mW
V
V
°C
°C
Optical-Electrical Characteristics (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION
Emitting Aperture
A
cw
Optical Output Power
Threshold Current
Operation Current
Forward Voltage
Lasing Wavelength
Spectral Width FWHM
Po
Ith
Iop
Uf
λp
∆λ
single mode
cw
Po = 100 mW
Po = 100 mW
Po = 100 mW
Po = 100 mW
Beam Divergence
Beam Divergence
Monitor Current
θ// Po = 100 mW
θ⊥ Po = 100 mW
Im Po = 100 mW
MIN
25
220
1062
0.9
TYP
1x5
100
30
250
1.8
1064
0.2
25
40
1.0
MAX
35
280
1.9
1067
0.3
1.1
UNIT
µm²
mW
mA
mA
V
nm
nm
°
°
mA
Free Datasheet http://www.datasheet4u.com/
|
|||
Pages | Pages 1 | ||
Télécharger | [ RLT1060-100GS ] |
No | Description détaillée | Fabricant |
RLT1060-100G | High Power Infrared Laser Diode | Roithner |
RLT1060-100GS | High Power Infrared Laser Diode | Roithner |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |