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PDF IRF7828PBF Data sheet ( Hoja de datos )

Número de pieza IRF7828PBF
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRF7828PBF Hoja de datos, Descripción, Manual

PD-95214A
IRF7828PbF
HEXFET® Power MOSFET for DC-DC Converters
• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Lead-Free
S1
S2
A
8D
7D
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
SO-8
S3
G4
6D
5D
Top View
DEVICE CHARACTERISTICS…
The IRF7828 has been optimized for all parameters that
are critical in synchronous buck converters including
RDS(on), gate charge and Cdv/dt-induced turn-on immunity.
The IRF7828 offers particulary low RDS(on) and high Cdv/dt
immunity for synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 3W is possible in a typical
PCB mount application.
RDS(on)
QG
Qsw
Qoss
IRF7828PbF
9.5m
9.2nC
3.7nC
6.1nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (VGS 4.5V)
Pulsed Drain Current
TA = 25°C
TL = 70°C
Power Dissipation
TA = 25°C
TL = 70°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
Thermal Resistance
Parameter
Maximum Junction-to-Ambientƒ
Maximum Junction-to-Lead
Symbol
VDS
VGS
ID
IDM
PD
TJ, TSTG
IS
ISM
R θJA
RθJL
IRF7828PbF
30
±20
13.6
11
100
2.5
1.6
–55 to 150
3.1
100
Max.
50
20
Units
V
A
W
°C
A
Units
°C/W
°C/W
04/05/07
Free Datasheet http://www.datasheet4u.com/

1 page




IRF7828PBF pdf
IRF7828PbF
SO-8 Package Outline
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