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IRF7822PBF fiches techniques PDF

International Rectifier - Power MOSFET ( Transistor )

Numéro de référence IRF7822PBF
Description Power MOSFET ( Transistor )
Fabricant International Rectifier 
Logo International Rectifier 





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IRF7822PBF fiche technique
PD - 95024
IRF7822PbF
HEXFET® Power MOSFET for DC-DC Converters
• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Lead-Free
S1
S2
A
8D
7D
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
SO-8
S3
G4
6D
5D
Top View
DEVICE CHARACTERISTICS…
The IRF7822 has been optimized for all parameters that
are critical in synchronous buck converters including
RDS(on), gate charge and Cdv/dt-induced turn-on immunity.
The IRF7822 offers particulary low RDS(on) and high Cdv/
dt immunity for synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 3W is possible in a typical
PCB mount application.
RDS(on)
QG
Qsw
Qoss
IRF7822
5.0m
44nC
12nC
27nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (VGS 4.5V)
Pulsed Drain Current
TA = 25°C
TA = 70°C
Power Dissipation
TA = 25°C
TA = 70°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
Thermal Resistance
Parameter
Maximum Junction-to-Ambientƒ
Maximum Junction-to-Lead
www.irf.com
Symbol
VDS
VGS
ID
IDM
PD
TJ, TSTG
IS
ISM
RθJA
RθJL
IRF7822
30
±12
18
13
150
3.1
3.0
–55 to 150
3.8
150
Max.
40
20
Units
V
A
W
°C
A
Units
°C/W
°C/W
1
9/30/04
Free Datasheet http://www.datasheet4u.com/

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