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PDF 2SC6134 Data sheet ( Hoja de datos )
| Número de pieza | 2SC6134 | |
| Descripción | High-Speed Switching Applications | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6134
2CS6134
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
Unit: mm
2.1±0.1
1.7±0.1
• High DC current gain: hFE = 250 to 400 (IC = 0.3A)
• Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)
• High-speed switching: tf = 25 ns (typ.)
1
23
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
DC
Pulse
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEX
VCEO
VEBO
IC
ICP
IB
PC (Note1)
PC (Note2)
Tj
Tstg
50
50
30
6
3.0
5.0
0.3
800
500
150
−55 to 150
V
V
V
V
A
A
mW
°C
°C
1 :Gate
2 :Source
3 :Drain
UFM
JEDEC
―
JEITA
―
TOSHIBA
2-2U1A
Weight: 6.6 mg (typ.)
Note1: Mounted on ceramic board. (25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm2 )
Note2: Mounted on FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2 )
Note3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2010-03-07
Free Datasheet http://www.datasheet4u.com/
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| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SC6134.PDF ] | |
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