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2SC6133 fiches techniques PDF

Toshiba - High-Speed Switching Applications

Numéro de référence 2SC6133
Description High-Speed Switching Applications
Fabricant Toshiba 
Logo Toshiba 





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2SC6133 fiche technique
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6133
2SC6133
High-Speed Switching Applications
DC-DC Converter Applications
Unit: mm
2.1±0.1
1.7±0.1
High DC current gain: hFE = 400 to 1000 (IC = 0.15A)
Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max)
High-speed switching: tf = 45 ns (typ.)
1
23
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
DC
Pulse
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEX
VCEO
VEBO
IC
ICP
IB
P(Note1)
P(Note2)
Tj
Tstg
40
30
20
7
1.5
2.5
150
800
500
150
55 to 150
V
V
V
V
A
mA
mW
°C
°C
1 :Gate
2 :Source
3 :Drain
UFM
JEDEC
JEITA
TOSHIBA
2-2U1A
Weight: 6.6 mg (typ.)
Note1:
Note2:
Mounted on ceramic board.
(25.4 mm × 25.4 mm × 0.8 mm, Cu
Mounted on FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu
Pad: 645 mm2 )
Pad: 645 mm2 )
Note3:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2010-03-07
Free Datasheet http://www.datasheet4u.com/

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