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ROHM Semiconductor - Switching Diode

Numéro de référence UMN20N
Description Switching Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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UMN20N fiche technique
Data Sheet
Switching Diode
UMN20N
lApplications
General switching
lDimensions (Unit : mm)
lFeatures
1)Small mold type. (UMD6)
2)Low leakage
lConstruction
Silicon epitaxial planer
2.0±0.2
0.25±
0.1
0.05
各リードとも
Eachleadhas same dimension
(6) (5)
(4)
0.15±0.05
(1) (2)
0.65
0.65
1.3±0.1
0~0.1
(3)
0.7
0.9±0.1
ROHM : UMD6
JEDEC : SOT-363
JEITA : SC-88
dot (year week factory)
lTaping dimensions (Unit : mm)
lLand size figure (Unit : mm)
0.65 0.65
0.35
UMD6
lStructure
lAbsolute maximum ratings (Ta=25C)
Parameter
Symbol
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Forward current (repetitive peak)
Average rectified forward current
VRM
VR
IFM
Io
Surge current (t=1sec)
Junction temperature
Isurge
Tj
Storage temperature
Tstg
Limits
40
35
225
100
400
150
-55 to +150
Unit
V
V
mA
mA
mA
C
C
lElectrical characteristics (Ta=25C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
Reverse current
VF -
IR -
- 1.2
- 0.01
Capacitance between terminals
Ct
-
- 5.0
Unit Conditions
V IF=100mA
μA VR=20V
pF VR=0.5V , f=1.0MHz
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.10 - Rev.A
Free Datasheet http://www.datasheet4u.com/

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