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PDF ICE60N160B Data sheet ( Hoja de datos )
| Número de pieza | ICE60N160B | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | Icemos | |
| Logotipo |  |
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Preliminary Data Sheet
ICE60N160B
ICE60N160B N-Channel
Enhancement Mode MOSFET
ID
V(BR)DSS
Product Summary
TA=25oC
ID=250uA
23.8A
650V
Max
Min
rDS(on) VGS=10V 0.14Ω
Typ
Features
• Low rDS(on)
• Ultra Low Gate Charge
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
• Increased transconductance performance
• Optimized design for high performance power systems
Qg VDS=480V 85nC
D
Typ
G
S
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS
FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20
YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
T0263
Standard Metal
Heatsink
1=Gate, 2=Drain,
3=Source.
Maximum ratings b , at Tj=25oC, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
ID
ID, pulse
E AS
Tc=25oC
Tc=25oC
ID=6A
Avalanche current, repetitive
I AR limited by Tjmax
MOSFET dv/dt ruggedness
dv/dt
VDS=480V, ID=23.8A,
Tj=125oC
Gate source voltage
Static
VGS
AC (f>1Hz)
Power dissipation
Ptot
Operating and storage temperature
Tj, Tstg
a When mounted on 1inch square 2oz copper clad FR-4
Tc=25oC
b Preliminary Data Sheet – Specifications subject to change
Value
23.8
72
690
6
50.0
±20
±30
208
-55 to +150
Unit
A
A
mJ
A
V/ns
V
W
oC
SP-60N160B-000-2a
06/05/2013
Free Datasheet http://www.datasheet41u.com/
1 page  
100000
Capacitance
10000
1000
100
Ciss
Coss
10 Crss
1
0 100 200 300 400 500 600
VDS - Drain-to-Source Voltage (V)
Maximum Rated Forward Biased Safe Operating Area
100
10
Single Pulse,
Tc = 25oC,
Tj=150oC,
VGS = 10V
10us
100us
1
0.1
RDS(on) Limit
Package Limit
Thermal Limit
1ms
10ms
DC
0.01
1
10 100
VDS - Drain-to-Source Voltage (V)
1000
Preliminary Data Sheet
ICE60N160B
Drain-to-Source Breakdown Voltage vs. Junction Temperature
1.2
1.1
ID = 1mA
1.0
0.9
0.8
-50
-25 0 25 50 75 100 125
TJ - Junction Temperature (˚C)
150
Transient Thermal Response, Junction-to-Case
1.00
0.5
0.2
0.1
0.10
0.05
0.02
0.01
Single Pulse
0.00
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00
t - Time (s)
SP-60N160B-000-2a
06/05/2013
Free Datasheet http://www.datasheet45u.com/
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet ICE60N160B.PDF ] | |
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