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PDF ICE4N70 Data sheet ( Hoja de datos )
| Número de pieza | ICE4N70 | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | Icemos | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de ICE4N70 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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Preliminary Data Sheet
ICE4N70
ICE4N70 N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on)
• Ultra Low Gate Charge
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
• Increased transconductance performance
• Optimized design for high performance power systems
HALOGEN
FREE
ID
V(BR)DSS
rDS(on)
Qg
Product Summary
TA=25oC
ID=250uA
VGS=10V
VDS=480V
4A
700V
1.0Ω
21nC
D
Max
Min
Typ
Typ
G
S
T0220
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS
FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20
YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
Standard Metal
Heatsink
1=Gate, 2=Drain,
3=Source.
Maximum ratings b , at Tj=25oC, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
ID
ID, pulse
E AS
Tc=25oC
Tc=25oC
ID=2A
Avalanche current, repetitive
I AR limited by Tjmax
MOSFET dv/dt ruggedness
dv/dt
VDS=480V, ID=4A,
Tj=125oC
Gate source voltage
Static
VGS
AC (f>1Hz)
Power dissipation
Ptot Tc=25oC
Operating and storage temperature
Tj, Tstg
Mounting torque
M 3 & 3.5 screws
a When mounted on 1inch square 2oz copper clad FR-4
b Preliminary Data Sheet – Specifications subject to change
Value
4
12
80
2
Unit
A
A
mJ
A
50 V/ns
±20
±30
65
-55 to +150
60
V
W
oC
Ncm
SP-4N70-000-3b
07/03/2013
Free Datasheet http://www.datasheet41u.com/
1 page  
100000
Capacitance
10000
1000
100
Ciss
Coss
10 Crss
1
0 200 400 600
VDS - Drain-to-Source Votlage (V)
Maximum Rated Forward Biased Safe Operating Area
100
Single Pulse,
Tc = 25oC,
Tj=150oC,
VGS = 10V
10
10us
100us
1
1ms
0.1
RDS(on) Limit
Package Limit
Thermal Limit
10ms
DC
0.01
1
10 100
VDS - Drain-to-Source Voltage (V)
1000
Preliminary Data Sheet
ICE4N70
Drain-to-Source Breakdown Voltage vs. Junction Temperature
1.2
1.1
ID = 1mA
1.0
0.9
0.8
-50
-25 0 25 50 75 100 125
TJ - Junction Temperature (˚C)
150
Transient Thermal Response, Junction-to-Case
1.00
0.5
0.2
0.1
0.10
0.05
0.02
0.01
Single Pulse
0.00
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00
t - Time (seconds)
SP-4N70-000-3b
07/03/2013
Free Datasheet http://www.datasheet45u.com/
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet ICE4N70.PDF ] | |
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