ICE22N65W Datasheet PDF - Icemos
| Part Number | ICE22N65W | |
| Description | N-Channel Enhancement Mode MOSFET | |
| Manufacturers | Icemos | |
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There is a preview and ICE22N65W download ( pdf file ) link at the bottom of this page. Total 8 Pages | ||
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Preliminary Data Sheet
ICE22N65W
ICE22N65W N-Channel
Enhancement Mode MOSFET
Features
• TO247 package
• Low rDS(on)
• Ultra Low Gate Charge
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
• Increased transconductance performance
• Optimized design for high performance power systems
HALOGEN
FREE
ID
V(BR)DSS
rDS(on)
Qg
Product Summary
TA=25oC
ID=250uA
VGS=10V
VDS=480V
22A
650V
0.165Ω
82nC
D
G
S
Max
Min
Typ
Typ
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS
FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20
YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
TO247
1:G, 2:D,
3:S, 4:D,
(TO-247)
Maximum ratings b , at Tj=25oC, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
ID
ID, pulse
E AS
Tc=25oC
Tc=25oC
ID=11.5A
Avalanche current, repetitive
I AR limited by Tjmax
MOSFET dv/dt ruggedness
dv/dt
VDS=480V, ID=22A,
Tj=125oC
Gate source voltage
Static
VGS
AC (f>1Hz)
Power dissipation
Ptot Tc=25oC
Operating and storage temperature
Tj, Tstg
Mounting torque
M 3 & 3.5 screws
a When mounted on 1inch square 2oz copper clad FR-4
b Preliminary Data Sheet – Specifications subject to change
Value
22
66
690
10
50
±20
±30
208
-55 to +150
60
Unit
A
A
mJ
A
V/ns
V
W
oC
Ncm
SP-22N65W-000-3a
06/05/2013
Free Datasheet http://www.datasheet41u.com/
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100000
Capacitance
10000
1000
100
Ciss
Coss
10
1
0
Crss
100 200 300 400 500
VDS - Drain-to-Source Voltage (V)
600
Maximum Rated Forward Biased Safe Operating Area
100
10
Single Pulse,
Tc = 25oC,
Tj=150oC,
VGS = 10V
10us
100us
1
0.1
RDS(on) Limit
Package Limit
Thermal Limit
1ms
10ms
DC
0.01
1
10 100
VDS - Drain-to-Source Voltage (V)
1000
Preliminary Data Sheet
ICE22N65W
Drain-to-Source Breakdown Voltage vs. Junction Temperature
1.2
1.1
ID = 1mA
1.0
0.9
0.8
-50
-25 0 25 50 75 100 125
TJ - Junction Temperature (˚C)
150
Transient Thermal Response, Junction-to-Case
1.00
0.5
0.2
0.1
0.10
0.05
0.02
0.01
Single Pulse
0.00
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00
t - Time (s)
SP-22N65W-000-3a
06/05/2013
Free Datasheet http://www.datasheet45u.com/
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for ICE22N65W electronic component. |
| Information | Total 8 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ ICE22N65W.PDF Datasheet ] | |
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