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Número de pieza | ICE22N60W | |
Descripción | N-Channel Enhancement Mode MOSFET | |
Fabricantes | Icemos | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de ICE22N60W (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! Preliminary Data Sheet
ICE22N60W
ICE22N60W N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on)
• Ultra Low Gate Charge
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
• Optimized design for hard switching SMPS topologies
HALOGEN
FREE
Product Summary
ID TA=25oC 22A
BVDSS @Tjmax ID=250uA 650V
rDS(on)
VGS=10V 0.14Ω
Qg VDS=480V 82nC
Max
Min
Typ
Typ
D
G
S
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS
FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20
YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
TO247
1:G, 2:D,
3:S, 4:D,
(TO-247)
Maximum ratings b , at Tj=25oC, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
ID
ID, pulse
E AS
Tc=25oC
Tc=25oC
ID=11.5A
Avalanche current, repetitive
I AR limited by Tjmax
MOSFET dv/dt ruggedness
dv/dt
VDS=480V, ID=22A,
Tj=125oC
Gate source voltage
static
VGS
AC (f>1Hz)
Power dissipation
Ptot Tc=25oC
Operating and storage temperature
Tj, Tstg
Mounting torque
M 3 & 3.5 screws
a When mounted on 1inch square 2oz copper clad FR-4
b Preliminary Data Sheet – Specifications subject to change
Value
22
82
690
10
50.0
±20
±30
208
-55 to +150
60
Unit
A
A
mJ
A
V/ns
V
W
oC
Ncm
SP-22N60W-000-3
05/15/2013
Free Datasheet http://www.datasheet41u.com/
1 page 10000
1000
100
Capacitance
Ciss
Coss
Preliminary Data Sheet
ICE22N60W
Drain-to-Source Breakdown Voltage vs. Junction Temperature
1.2
1.1
ID = 1mA
1.0
10 Crss
0.9
1
0 100 200 300 400 500 600
VDS - Drain-to-Source Voltage (V)
Maximum Rated Forward Biased Safe Operating Area
100
Single Pulse,
Tc = 25oC,
Tj=150oC,
VGS = 10V
10us
10
100us
1ms
1
10ms
DC
0.1
RDS(on) Limit
Package Limit
Thermal Limit
0.01
1
10 100
VDS - Drain-to-Source Voltage (V)
1000
0.8
-50
-25 0 25 50 75 100 125
TJ - Junction Temperature (˚C)
150
Transient Thermal Response, Junction-to-Case
1.00
0.5
0.2
0.1
0.10
0.05
0.02
0.01
Single Pulse
0.00
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00
t - Time (s)
SP-22N60W-000-3
05/15/2013
Free Datasheet http://www.datasheet45u.com/
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet ICE22N60W.PDF ] |
Número de pieza | Descripción | Fabricantes |
ICE22N60 | N-Channel Enhancement Mode MOSFET | Icemos |
ICE22N60 | N-Channel Enhancement Mode MOSFET | Micross Components |
ICE22N60W | N-Channel Enhancement Mode MOSFET | Icemos |
ICE22N60W | N-Channel Enhancement Mode MOSFET | Micross Components |
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