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PDF ICE20N170FP Data sheet ( Hoja de datos )
| Número de pieza | ICE20N170FP | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | Icemos | |
| Logotipo |  |
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Preliminary Data Sheet
ICE20N170FP
ICE20N170FP N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on)
• Ultra Low Gate Charge
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
• Increased transconductance performance
• Optimized design for high performance power systems
HALOGEN
FREE
ID
V(BR)DSS
rDS(on)
Qg
Product Summary
TA=25oC
ID=250uA
VGS=10V
VDS=480V
20A
600V
0.17Ω
62nC
D
G
S
Max
Min
Typ
Typ
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS
FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20
YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
Maximum ratings b , at Tj=25oC, unless otherwise specified
T0220 Full-PAK
Isolated (T0-220)
1=Gate, 2=Drain,
3=Source
Parameter
Symbol
Conditions
Value
Unit
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
ID
ID, pulse
E AS
Tc=25oC
Tc=25oC
ID=10A
20 A
62 A
520 mJ
Avalanche current, repetitive
I AR limited by Tjmax
20
A
MOSFET dv/dt ruggedness
dv/dt
VDS=480V, ID=20A,
Tj=125oC
50
V/ns
Gate source voltage
Static
VGS
AC (f>1Hz)
±20
±30
V
Power dissipation
Operating and storage temperature
Mounting torque
Ptot
Tj, Tstg
Tc=25oC
M 2.5 screws
35
-55 to +150
50
W
oC
Ncm
a When mounted on 1inch square 2oz copper clad FR-4
b Preliminary Data Sheet – Specifications subject to change
SP-20N170FP-000-4
05/15/2013
Free Datasheet http://www.datasheet41u.com/
1 page  
10000
1000
100
Capacitance
Ciss
Coss
Preliminary Data Sheet
ICE20N170FP
Drain-to-Source Breakdown Voltage vs. Junction Temperature
1.2
1.1
ID = 1mA
1.0
10
Crss
1
0 100 200 300 400 500 600
VDS - Drain-to-Source Voltage (V)
Maximum Rated Forward Biased Safe Operating Area
100
Single Pulse,
Tc = 25oC,
Tj=150oC,
VGS = 10V
10
10us
1
0.1
RDS(on) Limit
Package Limit
Thermal Limit
100us
1ms
10ms
DC
0.01
1
10 100
VDS - Drain-to-Source Voltage (V)
1000
0.9
0.8
-50
-25 0 25 50 75 100 125
TJ - Junction Temperature (˚C)
150
Transient Thermal Response, Junction-to-Case
1.00
0.5
0.2
0.1
0.10
0.05
0.02
0.01
Single Pulse
0.00
1.0E-06
1.0E-04
1.0E-02
t - Time (s)
1.0E+00
SP-20N170FP-000-4
05/15/2013
Free Datasheet http://www.datasheet45u.com/
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet ICE20N170FP.PDF ] | |
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