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Numéro de référence | ICE13N65FP | ||
Description | N-Channel Enhancement Mode MOSFET | ||
Fabricant | Icemos | ||
Logo | |||
Preliminary Data Sheet
ICE13N65FP
ICE13N65FP N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on)
• Ultra Low Gate Charge
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
• Increased transconductance performance
• Optimized design for high performance power systems
HALOGEN
FREE
ID
V(BR)DSS
rDS(on)
Qg
Product Summary
TA=25oC
ID=250uA
VGS=10V
VDS=480V
13A
650V
0.25Ω
59nC
D
G
S
Max
Min
Typ
Typ
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS
FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20
YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
T0220 Full-PAK
Isolated (T0-220)
Maximum ratings b , at Tj=25oC, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
ID
ID, pulse
E AS
Tc=25oC
Tc=25oC
ID=6.5A
Avalanche current, repetitive
I AR limited by Tjmax
MOSFET dv/dt ruggedness
dv/dt
VDS=480V, ID=13A,
Tj=125oC
Gate source voltage
Static
VGS
AC (f>1Hz)
Power dissipation
Ptot Tc=25oC
Operating and storage temperature
Tj, Tstg
Mounting torque
M 2.5 screws
a When mounted on 1inch square 2oz copper clad FR-4
b Preliminary Data Sheet – Specifications subject to change
Value
13
39
460
6.5
Unit
A
A
mJ
A
50 V/ns
±20
±30
35
-55 to +150
50
V
W
oC
Ncm
SP-13N65FP-000-2a
06/05/2013
Free Datasheet http://www.datasheet41u.com/
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Pages | Pages 9 | ||
Télécharger | [ ICE13N65FP ] |
No | Description détaillée | Fabricant |
ICE13N65FP | N-Channel Enhancement Mode MOSFET | Icemos |
ICE13N65FP | N-Channel Enhancement Mode MOSFET | Micross Components |
US18650VTC5A | Lithium-Ion Battery | Sony |
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