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ICE11N70 fiches techniques PDF

Icemos - N-Channel Enhancement Mode MOSFET

Numéro de référence ICE11N70
Description N-Channel Enhancement Mode MOSFET
Fabricant Icemos 
Logo Icemos 





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ICE11N70 fiche technique
Preliminary Data Sheet
ICE11N70
ICE11N70 N-Channel
Enhancement Mode MOSFET
ID
V(BR)DSS
Product Summary
TA=25oC
ID=250uA
11A
700V
Max
Min
rDS(on) VGS=10V 0.20Ω
Typ
Features
• Low rDS(on)
• Ultra Low Gate Charge
HALOGEN
FREE
Qg VDS=480V 85nC
D
Typ
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
• Increased transconductance performance
G
• Optimized design for high performance power systems
S
T0220
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS
FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20
YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
Standard Metal
Heatsink
1=Gate, 2=Drain,
3=Source.
Maximum ratings b , at Tj=25°C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
ID Tc=25oC
Pulsed drain current
ID, pulse
Tc=25oC
Avalanche energy, single pulse
E AS
ID=7.5A
Avalanche current, repetitive
I AR limited by Tjmax
MOSFET dv/dt ruggedness
dv/dt
VDS=480V, ID=11A,
Tj=125oC
Gate source voltage
Static
VGS
AC (f>1Hz)
Power dissipation
Operating and storage temperature
Mounting torque
Ptot
Tj, Tstg
Tc=25°C
M 3 & 3.5 screws
a When mounted on 1inch square 2oz copper clad FR-4
b Preliminary Data Sheet Specifications subject to change
Value
11
33
280
7.5
Unit
A
A
mJ
A
50 V/ns
±20
±30
108
-55 to +150
60
V
W
°C
Ncm
SP-11N70-000-4
07/17/2013
Free Datasheet http://www.datasheet41u.com/

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