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PDF HMC7441 Data sheet ( Hoja de datos )
| Número de pieza | HMC7441 | |
| Descripción | GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER | |
| Fabricantes | Hittite | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HMC7441 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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v00.0913
Typical Applications
The HMC7441 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• VSAT & SATCOM
• Military & Space
Functional Diagram
HMC7441
GaAs pHEMT MMIC 2 WATT
POWER AMPLIFIER, 27.5 - 31 GHz
Features
Saturated Output Power: +34 dBm @ 25% PAE
High Output IP3: +38 dBm
High Gain: 23 dB
DC Supply: +6V @ 1000 mA
No External Matching Required
Die Size: 3.18 x 2.84 x 0.1 mm
General Description
The HMC7441 is a three-stage GaAs pHEMT Power
Amplifier which operates between 27.5 and 31 GHz.
The amplifier provides 23 dB of gain and +34 dBm
of saturated output power at 25% PAE from a 6V
supply. With an excellent output IP3 of +38 dBm, the
HMC7441 is ideal for linear application such as Ka-
band VSAT or high capacity point-to-point or point-
to-multi-point radios demanding +34 dBm of efficient
saturated output power. The RF I/Os are DC blocked
and matched to 50 Ohms for ease of integration
into Multi-Chip-Modules (MCMs). All data is taken
with the chip in a 50 Ohm test fixture connected via
(1) 0.025mm (1 mil) diameter wire bonds of 0.31 mm
(12 mil) length.
EVdledc=trVicdda1l ,SVpdedc2,ifVicdda3ti,oVndsd,4T, AV=dd+525=°+C6V, Idd = 1000 mA [1]
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)[2]
Total Supply Current (Idd)
[1] Adjust Vgg between -2 to 0V to achieve Idd = 1000 mA typical.
[2] Measurement taken at +6V @ 1000 mA, Pout / Tone = +28 dBm
Min.
20
31
Typ.
27.5 - 31
23
0.03
8
8
34
34
38
1000
Max.
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
mA
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
1
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
Free Datasheet http://www.datasheet4u.com/
1 page  
v00.0913
Reverse Isolation vs. Temperature
0
-10
-20
-30
-40
-50
-60
-70
-80
27
28 29 30 31
FREQUENCY (GHz)
32
+25C
+85C
-55C
Gain & Power vs. Supply Voltage
@ 29 GHz
40
35
30
25
20
15
5.5
5.6
GAIN(dB)
5.7 5.8
Vdd (V)
P1dB(dBm)
5.9 6
Psat(dBm)
HMC7441
GaAs pHEMT MMIC 2 WATT
POWER AMPLIFIER, 27.5 - 31 GHz
Gain & Power vs. Supply Current
@ 29 GHz
40
35
30
25
20
15
900
950
GAIN(dB)
1000
Idd (mA)
1050
1100
P1dB(dBm)
Psat(dBm)
Power Dissipation
10
9
8
7
6
5
4
-8 -6 -4 -2 0 2 4 6 8 10 12 14 16
INPUT POWER (dBm)
28 GHz
29 GHz
30 GHz
31 GHz
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
5
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet HMC7441.PDF ] | |
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