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PDF FDPF12N50NZ Data sheet ( Hoja de datos )
| Número de pieza | FDPF12N50NZ | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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March 2013
FDP12N50NZ / FDPF12N50NZ
N-Channel UniFETTM II MOSFET
500 V, 11.5 A, 520 m
Features
• RDS(on) = 460 m (Typ.) @ VGS = 10 V, ID = 5.75 A
• Low Gate Charge (Typ. 23 nC )
• Low Crss (Typ. 14 pF )
• 100% Avalanche Tested
• ESD Improved Capability
• RoHS Compliant
Applications
Description
UniFETTM II MOSFET is Fairchild Semiconductor®’s high volt-
age MOSFET family based on advanced planar stripe and
DMOS technology. This advanced MOSFET family has the
smallest on-state resistance among the planar MOSFET, and
also provides superior switching performance and higher ava-
lanche energy strength. In addition, internal gate-source ESD
diode allows UniFET II MOSFET to withstand over 2kV HBM
surge stress. This device family is suitable for switching power
converter applications such as power factor correction (PFC), flat
panel display (FPD) TV power, ATX and electronic lamp ballasts.
• LCD/LED/PDP TV
• Lighting
• Uninterruptible Power Supply
D
G
G
D
S
TO-220
G
D
S
TO-220F
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
S
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDP12N50NZ FDPF12N50NZ
500
±25
11.5 11.5*
6.9 6.9*
46 46*
560
11.5
17
4.5
170 42
1.37 0.33
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +150
300
*Dran current limited by maximum junction temperature
Thermal Characteristics
Symbol
RJC
RCS
RJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Case to Sink Typ
Thermal Resistance, Junction to Ambient, Max.
FDP12N50NZ
0.73
0.5
62.5
FDPF12N50NZ
3.0
-
62.5
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2010 Fairchild Semiconductor Corporation
FDP12N50NZ / FDPF12N50NZ Rev. C0
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
1 page  
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve - FDP12N50NZ
5
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01 Single pulse
0.001
10-5
10-4
PDM
t1
t2
* Notes :
1. ZJC(t) = 0.73oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZJC(t)
10-3
10-2
10-1
Rectangular Pulse Duration [sec]
1
10
Figure 13. Transient Thermal Response Curve - FDPF12N50NZ
5
1
10-1
D=0.5
0.2
0.1
0.05
0.02
0.01
10-2
10-5
single pulse
PDM
t1
t2
*Notes:
1. ZJC(t) = 3.0oC/W Max.
2. Duty Factor, D = t1/t2
3. TJM - TC = PDM * ZJC(t)
10-4
10-3
10-2
10-1
t1, Square Wave Pulse Duration [sec]
1
10
©2010 Fairchild Semiconductor Corporation
FDP12N50NZ / FDPF12N50NZ Rev. C0
5
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet FDPF12N50NZ.PDF ] | |
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