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PDF FCPF600N60Z Data sheet ( Hoja de datos )
| Número de pieza | FCPF600N60Z | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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FCP600N60Z / FCPF600N60Z
N-Channel SuperFET® II MOSFET
600 V, 7.4 A, 600 mΩ
March 2013
Features
• 650 V @TJ = 150°C
• Max. RDS(on) = 600 mΩ
• Ultra Low Gate Charge (Typ. Qg = 20 nC)
• Low Effective Output Capacitance (Typ. Coss.eff = 74 pF)
• 100% Avalanche Tested
• ESD Improved Capacity
Applications
Description
SuperFET®II MOSFET is Fairchild Semiconductor®’s first gen-
eration of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-resis-
tance and lower gate charge performance.This advanced tech-
nology is tailored to minimize conduction loss, provide superior
switching performance, and withstand extreme dv/dt rate and
higher avalanche energy. Consequently, SuperFETII MOSFET is
suitable for various AC/DC power conversion for system minia-
turization and higher efficiency.
• LCD / LED / PDP TV and Monitor Lighting
• Solar Inverter
• AC-DC Power Supply
D
G
GDS
TO-220
GD S
TO-220F
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
S
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
MOSFET dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
FCP600N60Z FCPF600N60Z Unit
600 V
±20 V
(f > 1 Hz)
±30
V
7.4 7.4*
A
4.7 4.7*
(Note 1)
22.2
22.2*
A
(Note 2)
135
mJ
(Note 1)
1.5
A
(Note 1)
0.89
mJ
(Note 3)
20
V/ns
100 V/ns
89 28
0.71 0.22
-55 to +150
W
W/oC
oC
300 oC
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
FCP600N60Z FCPF600N60Z Unit
1.4 4.5 oC/W
62.5 62.5
©2012 Fairchild Semiconductor Corporation
FCP600N60Z / FCPF600N60Z Rev. C2
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
1 page  
Typical Performance Characteristics (Continued)
Figure 13. Transient Thermal Response Curve - FCP600N60Z
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0.1 Single pulse
0.01
10-5
10-4
PDM
*Notes:
t1
t2
1. ZθJC(t) = 1.4oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
Rectangular Pulse Duration [sec]
10-1
100
Figure 14. Transient Thermal Response Curve - FCPF600N60Z
5
0.5
0.2
1
0.1
0.05
0.02
0.01
Single pulse
0.1
10-5
10-4
PDM
*Notes:
t1
t2
1. ZθJC(t) = 4.5oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
10-1
100
101
100
Rectangular Pulse Duration [sec]
©2012 Fairchild Semiconductor Corporation
FCP600N60Z / FCPF600N60Z Rev. C2
5
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet FCPF600N60Z.PDF ] | |
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