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PDF FCD380N60E Data sheet ( Hoja de datos )
| Número de pieza | FCD380N60E | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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March 2013
FCD380N60E
N-Channel SuperFET® II MOSFET
600 V, 10.2 A, 380 mΩ
Features
• 650 V @TJ = 150°C
• Max. RDS(on) = 380 mΩ
• Ultra Low Gate Charge (Typ. Qg = 34 nC)
• Low Effective Output Capacitance (Typ. Coss.eff = 97 pF)
• 100% Avalanche Tested
Description
SuperFET®II MOSFET is Fairchild Semiconductor®’s first gen-
eration of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-resis-
tance and lower gate charge performance.This advanced tech-
nology is tailored to minimize conduction loss, provide superior
switching performance, and withstand extreme dv/dt rate and
higher avalanche energy. Consequently, SuperFETII MOSFET is
suitable for various AC/DC power conversion for system minia-
turization and higher efficiency.
D
D
G
S
D-PAK
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
MOSFET dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
(f > 1 Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
S
FCD380N60E
600
±20
±30
10.2
6.4
30.6
211.6
2.3
1.06
20
100
106
0.85
-55 to +150
300
FCD380N60E
1.18
100
Unit
V
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2012 Fairchild Semiconductor Corporation
FCD380N60E Rev. C1
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
1 page  
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
2
1
0.5
0.2
0.1
0.05
0.02
0.1 0.01
Single pulse
0.05
10-5
10-4
PDM
*Notes:
t1
t2
1. ZθJC(t) = 1.18oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
Rectangular Pulse Duration [sec]
10-1
100
©2012 Fairchild Semiconductor Corporation
FCD380N60E Rev. C1
5
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FCD380N60E.PDF ] | |
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