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PDF K9HCG08U1E Data sheet ( Hoja de datos )
| Número de pieza | K9HCG08U1E | |
| Descripción | 16Gb E-die NAND Flash | |
| Fabricantes | Samsung | |
| Logotipo |  |
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Rev. 0.9.1,Mar. 2010
K9GAG08U0E
K9LBG08U0E
K9HCG08U1E
Final
16Gb E-die NAND Flash
Multi-Level-Cell (2bit/cell)
datasheet
SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND
SPECIFICATIONS WITHOUT NOTICE.
Products and specifications discussed herein are for reference purposes only. All information discussed
herein is provided on an "AS IS" basis, without warranties of any kind.
This document and all information discussed herein remain the sole and exclusive property of Samsung
Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property
right is granted by one party to the other party under this document, by implication, estoppel or other-
wise.
Samsung products are not intended for use in life support, critical care, medical, safety equipment, or
similar applications where product failure could result in loss of life or personal or physical harm, or any
military or defense application, or any governmental procurement to which special terms or provisions
may apply.
For updates or additional information about Samsung products, contact your nearest Samsung office.
All brand names, trademarks and registered trademarks belong to their respective owners.
ⓒ 2010 Samsung Electronics Co., Ltd. All rights reserved.
-1-
Free Datasheet http://www.datasheet4u.com/
1 page  
K9GAG08U0E
K9LBG08U0E K9HCG08U1E
1.0 INTRODUCTION
datasheet
Final Rev. 0.9.1
FLASH MEMORY
1.1 Product List
Part Number
K9GAG08U0E-S
K9LBG08U0E-S
K9HCG08U1E-S
Density
16Gb
32Gb
64Gb
Interface
Conventional
Vcc Range
2.7V ~ 3.6V
Organization
x8
PKG Type
48TSOP1
1.2 Features
• Voltage Supply
- 3.3V Device : 2.7V ~ 3.6V
• Organization
- Memory Cell Array : (2,076M x 110.49K) x 8bit
- Data Register : (8K + 436) x 8bit
• Automatic Program and Erase
- Page Program : (8K + 436)Byte
- Block Erase : (1M + 54.5K)Byte
• Page Read Operation
- Page Size : (8K + 436)Byte
- Random Read : 400μs(Max.)
- Serial Access : 30ns(Min.)
• Memory Cell : 2bit / Memory Cell
• Fast Write Cycle Time
- Program time : 1.2ms(Typ.)
- Block Erase Time : 1.5ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
- Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology
- ECC Requirement : 24bit/(1K +54.5)Byte
- Endurance & Data Retention : Pleae refer to the qualification report
• Command Register Operation
• Unique ID for Copyright Protection
• Package :
- K9GAG08U0E-SCB0/SIB0 : Pb-Halogen FREE PACKAGE
48 - Pin TSOP1 (12 x 20 / 0.5 mm pitch)
- K9LBG08U0E-SCB0/SIB0 : Pb-Halogen FREE PACKAGE
48 - Pin TSOP1 (12 x 20 / 0.5 mm pitch)
- K9HCG08U1E-SCB0/SIB0 : Pb-Halogen FREE PACKAGE
48 - Pin TSOP1 (12 x 20 / 0.5 mm pitch)
1.3 General Description
The device is offered in 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation
can be performed in typical 1.2ms on the 8,628-byte page and an erase operation can be performed in typical 1.5ms on a (1M+54.5K)byte block. Data in
the data register can be read out at 30ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input.
The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining
of data. Even the write-intensive systems can take advantage of the K9GAG08U0E′s extended reliability of P/E cycles which are presented in the Qualifi-
cation report by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9GAG08U0E is an optimum solution for large nonvol-
atile storage applications such as solid state file storage and other portable applications requiring non-volatility.
-5-
Free Datasheet http://www.datasheet4u.com/
5 Page 
K9GAG08U0E
K9LBG08U0E K9HCG08U1E
datasheet
Final Rev. 0.9.1
FLASH MEMORY
2.1 Absolute Maximum Ratings
Parameter
Voltage on any pin relative to VSS
Storage Temperature
Short Circuit Current
K9XXG08UXE-XCB0
K9XXG08UXE-XIB0
Symbol
VCC
VIN
VI/O
TSTG
Ios
Rating
-0.6 to + 4.6
-0.6 to + 4.6
-0.6 to Vcc+0.3 (<4.6V)
-65 to +100
5
NOTE :
1) Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is VCC+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2) Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Unit
V
°C
mA
2.2 Recommended Operating Conditions
(Voltage reference to GND, K9XXG08XXE-XCB0 :TA=0 to 70°C(1), K9XXG08XXE-XIB0:TA=-40 to 85°C(1))
Parameter
Supply Voltage
Supply Voltage
Symbol
VCC
VSS
Min Typ.
2.7 3.3
00
Max Unit
3.6 V
0V
NOTE:
1) Data retention is not guaranteed on Operating condition temperature over/under.
2.3 Dc And Operating Characteristics(Recommended Operating Conditions Otherwise Noted.)
Parameter
Operating
Current
Page Read with Serial
Access
Program
Erase
Stand-by Current(CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage
Input Low Voltage, All inputs
Output High Voltage Level
Output Low Voltage Level
Output Low Current(R/B)
Symbol
ICC1(4)
ICC2(4)
ICC3(4)
ISB(3)
ILI(5)
ILO(5)
VIH(1)
VIL(1)
VOH
VOL
IOL(R/B)
Test Conditions
tRC=30ns
CE=VIL, IOUT=0mA
-
-
CE=VCC-0.2, WP=0V/VCC
VIN=0 to Vcc(max)
VOUT=0 to Vcc(max)
-
-
K9GAG08U0E :IOH=-400μA
K9GAG08U0E :IOL=2.1mA
K9GAG08U0E :VOL=0.4V
Min Typ Max Unit
- 30 50 mA
- 10 50
- - ±10 μA
- - ±10
0.8 xVcc - Vcc +0.3
-0.3 - 0.2 xVcc
V
2.4 -
-
- - 0.4
8 10 - mA
NOTE :
1) VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for durations of 20 ns or less.
2) Typical value is measured at Vcc=3.3V, TA=25°C. Not 100% tested.
3) The Typical value of the K9LBG08U0E’s ISB is 20μA and the maximum value is100μA
The Typical value of the K9HCG08U1E’s ISB is 40μA and the maximum value is200μA
4) The Typical value of K9LBG08U0E, K9HCG08U1E’s Icc1, Icc2 and Icc3 are 35mA and the maximum values are 55mA.
5) The maximum value of K9LBG08U0E’s is ±20μA.
The maximum value of K9HCG08U1E’s is ±40μA.
- 11 -
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