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Número de pieza | 7MBR15UF120 | |
Descripción | Power Integrated Module | |
Fabricantes | Fuji Electric | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 7MBR15UF120 (archivo pdf) en la parte inferior de esta página. Total 16 Páginas | ||
No Preview Available ! SPECIFICATION
Device Name : Power Integrated Module
Type Name : 7MBR15UF120
Spec. No. : MS6M00793
Not recommend for new design.
DATE
N A M E APPROVED
D R A W N Aug.-06-'04 K. Komatsu
CHECKED Aug.-06-'04 O. Ikawa
Y. Seki
CHECKED
K. Yamada
Fuji Electric Device Technology Co.,Ltd.
MS6M00793 1/16
a
H04-004-07b
Free Datasheet http://www.datasheet4u.com/
1 page 5. Absolute Maximum Ratings ( at Tc= 25oC unless otherwise specified)
Items
Symbols Conditions
Maximum
Ratings
Collector-Emitter voltage
VCES
1200
Gate-Emitter voltage
VGES
±20
Ic
Continuous Tc=80oC
15
Tc=25oC
24
Collector current
Icp
1ms
Tc=80oC
30
Tc=25oC
48
-Ic
Continuous Tc=80oC
15
Collector Power Dissipation
Pc 1 device
98
Collector-Emitter voltage
VCES
1200
Gate-Emitter voltage
VGES
±20
Ic
Continuous Tc=80oC
10
Tc=25oC
20
Collector current
Icp
1ms
Tc=80oC
20
Tc=25oC
40
Collector Power Dissipation
Pc 1 device
77
Average Output Current
Surge Current (Non-Repetitive)
Io
IFSM
50Hz/60Hz
sine wave
Tj=150oC,10ms
15
280
I2t (Non-Repetitive)
I2t half sine wave
390
Junction temperature
Tj
design.Storage temperature
Tstg
Isolation
voltage
between terminal and baseplate(*1)
between thermistor and others (*2)
Viso AC : 1min.
newMounting Screw Torque
M4
(*1) All terminals should be connected together when isolation test will be done.
for(*2) Terminal T1 and T2 should be connected together. And another terminals
Not recommendshould be connected together and shorted to baseplate.
150
-40~ +125
2500
2500
1.3~1.7
Units
V
V
A
A
A
W
V
V
A
A
W
A
A
A2s
oC
oC
V
V
N.m
Fuji Electric Device Technology Co.,Ltd.
MS6M00793 5/16
a
H04-004-03a
Free Datasheet http://www.datasheet4u.com/
5 Page [ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 25oC(typ.) / chip
25
VGE=20V 15V 12V
20
15
10V
10
5
8V
0
012345
Collector - Emitter voltage : VCE [ V ]
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 125oC(typ.) / chip
25
VGE=20V 15V
12V
20
15
10V
10
5
8V
0
012345
Collector - Emitter voltage : VCE [ V ]
[ Inverter ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.) / chip
25
Tj=25 oC Tj=125 oC
20
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25oC (typ.) / chip
10
8
15
design.10
new5
for0
end0
1234
Collector - Emitter voltage : VCE [ V ]
5
recomm[ Inverter ]
otCapacitance vs. Collector-Emitter voltage (typ.)
NVGE=0V, f= 1MHz, Tj= 25oC
6
4
2 Ic=20A
10A
5A
0
5 10 15 20 25
Gate - Emitter voltage : VGE [ V ]
[ Inverter ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=15A, Tj= 25oC
10 4
1000
25
1000
800
Cies
600
20
15
400
100 Cres
Coes
200
10
5
10
0
5 10 15 20 25 30
Collector - Emitter voltage : VCE [ V ]
35
00
0 10 20 30 40 50 60
Gate charge : Qg [ nC ]
Fuji Electric Device Technology Co.,Ltd.
MS6M00793 11/16
a
H04-004-03a
Free Datasheet http://www.datasheet4u.com/
11 Page |
Páginas | Total 16 Páginas | |
PDF Descargar | [ Datasheet 7MBR15UF120.PDF ] |
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