(PDF) P1004BD Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	P1004BD
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! P1004BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 10mΩ @VGS = 10V ID 55A TO-252 100% Rg tested 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy2 Power Dissipation TC = 25 °C TC = 100 °C L = 0.1mH TC = 25 °C TC = 70 °C VDS VGS ID IDM IAS EAS PD 40 V ±20 55 44 A 120 38 73 mJ 50 W 32 Junction & Storage Temperature Range TJ, TSTG -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2VDD = 20V , Starting TJ = 25 °C. SYMBOL RqJC RqJA TYPICAL MAXIMUM UNITS 2.5 62.5 °C / W Ver 1.1 1 2013-3-15 Free Datasheet http://www.datasheet4u.com/ 1 page P1004BD N-Channel Enhancement Mode MOSFET Ver 1.1 5 2013-3-15 Free Datasheet http://www.datasheet4u.com/ 5 Page

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PDF P1004BD Data sheet ( Hoja de datos )