(PDF) RJK6002DJE Datasheet

Número de pieza	RJK6002DJE
Descripción	MOS FET
Fabricantes	Renesas
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No Preview Available ! RJK6002DJE 600V - 2A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 5.7  typ. (at ID = 1 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) G 321 Absolute Maximum Ratings Item Symbol Drain to source voltage VDSS Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation VGSS ID Note1 ID Note3 (pulse) IDR Note1 IDR Note3 (pulse) Pch Note2 Channel to ambient thermal impedance ch-a Channel temperature Tch Storage temperature Tstg Notes: 1. Limited by Tch max. 2. Value at Tc = 25C 3. Pulse width limited by safe operating area. Preliminary Datasheet R07DS0845EJ0100 Rev.1.00 Jul 05, 2011 D 1. Source 2. Drain 3. Gate S Ratings 600 30 2 4 2 4 0.9 139 150 –55 to +150 (Ta = 25°C) Unit V V A A A A W C/W C C R07DS0845EJ0100 Rev.1.00 Jul 05, 2011 Page 1 of 3 Free Datasheet http://www.datasheet4u.com/ 1 page

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PDF RJK6002DJE Data sheet ( Hoja de datos )