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Número de pieza | RJK5012DPP-E0 | |
Descripción | MOS FET | |
Fabricantes | Renesas | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RJK5012DPP-E0 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! RJK5012DPP-E0
500V - 12A - MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS(on) = 0.515 typ. (at ID = 6 A, VGS = 10 V, Ta = 25C)
Low leakage current
High speed switching
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
G
1
23
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
IDNote4
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
Channel to case thermal impedance
ch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
3. STch = 25C, Tch 150C
4. Limited by maximum safe operation area
Preliminary Datasheet
R07DS0561EJ0100
Rev.1.00
Jun 21, 2012
D
1. Gate
2. Drain
3. Source
S
Ratings
500
30
12
24
12
24
4
0.88
30
4.17
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0561EJ0100 Rev.1.00
Jun 21, 2012
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/
1 page RJK5012DPP-E0
10
Normalized Transient Thermal Impedance vs. Pulse Width
TC = 25°C
Preliminary
D=1
1
0.5
0.2
0.1
0.1
0.05
0.02
01.0S1hot Pulse
0.01
100 μ
1m
θch–c(t) = γS (t) • θch–c
θch–c = 4.17°C/W, TC = 25°C
PDM
D
=
PW
T
PW
T
10 m
100 m
1
Pulse Width PW (s)
10 100
Switching Time Test Circuit
Vin Monitor
10 Ω
Vin
10 V
D.U.T.
Vout
Monitor
RL
VDD
= 250 V
Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
tr
90%
td(off)
tf
R07DS0561EJ0100 Rev.1.00
Jun 21, 2012
Page 5 of 6
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet RJK5012DPP-E0.PDF ] |
Número de pieza | Descripción | Fabricantes |
RJK5012DPP-E0 | MOS FET | Renesas |
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