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Toshiba Semiconductor - Silicon PNP Epitaxial Type Transistor

Numéro de référence 2SA2070
Description Silicon PNP Epitaxial Type Transistor
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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2SA2070 fiche technique
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2070
High-Speed Switching Applications
DC-DC Converter Applications
2SA2070
Unit: mm
High DC current gain: hFE = 200 to 500 (IC = -0.1 A)
Low collector-emitter saturation voltage: VCE (sat) =- 0.20 V (max)
High-speed switching: tf = 70 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
DC
t = 10 s
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
ICP
IB
PC (Note 1)
Tj
Tstg
50
50
7
1.0
2.0
0.1
1.0
2.0
150
55 to 150
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu
area: 645 mm2)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2010-03-10

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