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Toshiba Semiconductor - TOSHIBA Transistor Silicon PNP Epitaxial Type

Numéro de référence 2SA2058
Description TOSHIBA Transistor Silicon PNP Epitaxial Type
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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2SA2058 fiche technique
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2058
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
2SA2058
Unit: mm
High DC current gain: hFE = 200 to 500 (IC = 0.2 A)
Low collector-emitter saturation voltage: VCE (sat) = 0.19 V (max)
High-speed switching: tf = 25 ns (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
DC
t = 10 s
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
ICP
IB
PC
(Note)
Tj
Tstg
20
10
7
1.5
2.5
150
500
750
150
55 to 150
V
V
V
A
mA
mW
°C
°C
Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area:
645 mm2)
JEDEC
JEITA
TOSHIBA
2-3S1A
Weight: 0.01 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Rise time
Switching time
Storage time
Fall time
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
Cob
tr
tstg
tf
VCB = −20 V, IE = 0
VEB = −7 V, IC = 0
IC = −10 mA, IB = 0
VCE = −2 V, IC = −0.2 A
VCE = −2 V, IC = −0.6 A
IC = −0.6 A, IB = −20 mA
IC = −0.6 A, IB = −20 mA
VCB = −10 V, IE = 0, f = 1 MHz
See Figure 1 circuit diagram.
VCC ∼− −6 V, RL = 10
IB1 = IB2 = −20 mA
Min Typ. Max Unit
  −100 nA
  −100 nA
10
V
200 500
125
  −0.19 V
  −1.10 V
12 pF
50
115
ns
25
1 2001-10-29

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