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PDF KU047N08P Data sheet ( Hoja de datos )
| Número de pieza | KU047N08P | |
| Descripción | N-ch Trench MOS FET | |
| Fabricantes | KEC | |
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SEMICONDUCTOR
TECHNICAL DATA
KU047N08P
N-ch Trench MOS FET
General Description
This Trench MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for DC/DC Converter,
Synchronous Rectification and a load switch in battery powered
applications
FEATURES
VDSS= 75V, ID= 130A
Drain-Source ON Resistance :
RDS(ON)=4.7m (Max.) @VGS = 10V
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
RATING
Drain-Source Voltage
VDSS
75
Gate-Source Voltage
VGSS
20
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
ID
IDP
EAS
EAR
dv/dt
130
83
400*
700
9
4.5
Drain Power
Dissipation
Tc=25
Derate above 25
PD
167
1.33
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg -55 ~ 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC
0.75
Thermal Resistance,
Junction-to-Ambient
RthJA
62.5
* : Drain current limited by maximum junction temperature.
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 9.9 +_ 0.2
B 15.95 MAX
C 1.3+0.1/-0.05
D 0.8 +_ 0.1
E 3.6 +_ 0.2
F 2.8 +_ 0.1
G 3.7
H 0.5+0.1/-0.05
I 1.5
J 13.08 +_ 0.3
K 1.46
L 1.4 +_ 0.1
M 1.27 +_ 0.1
N 2.54 +_ 0.2
O 4.5 +_ 0.2
P 2.4 +_ 0.2
Q 9.2 +_ 0.2
TO-220AB
PIN CONNECTION
D
G
2011. 1. 14
S
Revision No : 0
1/7
Free Datasheet http://www.datasheet4u.com/
1 page  
KU047N08P
Fig12. Transient Thermal Response Curve
100
Duty=0.5
0.2
10-1 0.1
0.05
0.02
0.01
10-2
10-5
Single Pulse
10-4
10-3
10-2
TIME (sec)
PDM
t1
t2
- Duty Factor, D= t1/t2
10-1 100 101
2011. 1. 14
Revision No : 0
5/7
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
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