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PDF KTJ6131E Data sheet ( Hoja de datos )
| Número de pieza | KTJ6131E | |
| Descripción | P CHANNEL MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
ULTRA-HIGH SPEED SWITCHING APPLICATIONS
ANALOG SWITCH APPLICATIONS
FEATURES
2.5 Gate Drive.
Low Threshold Voltage : Vth=-0.5
High Speed.
Small Package.
Enhancement-Mode.
-1.5V.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
DC Drain Current
Drain Power Dissipation
Channel Temperature
Storage Temperature Range
VDS
VGSS
ID
PD
Tch
Tstg
EQUIVALENT CIRCUIT
D
RATING
-30
20
-50
100
150
-55 150
UNIT
V
V
mA
mW
G
KTJ6131E
P CHANNEL MOS FIELD
EFFECT TRANSISTOR
E
B
DIM MILLIMETERS
2
D
A
B
1.60+_ 0.10
0.85+_ 0.10
13
C 0.70+_ 0.10
D 0.27+0.10/-0.05
E 1.60+_ 0.10
G 1.00+_ 0.10
H 0.50
J 0.13+_ 0.05
J
1. SOURCE
2. GATE
3. DRAIN
ESM
Marking
Type Name
EB
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Gate Leakage Current
Drain-Source Breakdown Voltage
Drain Cut-off Current
Gate Threshold Voltage
Forward Transfer Admittance
Drain-Source ON Resistance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Switching Time
Turn-on Time
Turn-off Time
IGSS
V(BR)DSS
IDSS
Vth
|Yfs|
RDS(ON)
Ciss
Crss
Coss
ton
toff
TEST CONDITION
VGS= 16V, VDS=0V
ID=-100 A, VGS=0V
VDS=-30V, VGS=0V
VDS=-3V, ID=-0.1mA
VDS=-3V, ID=-10mA
ID=-10mA, VGS=-2.5V
VDS=-3V, VGS=0V, f=1MHz
VDS=-3V, VGS=0V, f=1MHz
VDS=-3V, VGS=0V, f=1MHz
VDD=-3V, ID=-10mA, VGS=0 -2.5V
MIN.
-
-30
-
-0.5
15
-
-
-
-
-
-
TYP.
-
-
-
-
-
20
10.4
2.8
8.4
0.15
0.13
MAX.
1
-
-1
-1.5
-
40
-
-
-
-
-
UNIT
A
V
A
V
mS
pF
pF
pF
S
S
2003. 6. 23
Revision No : 0
1/3
Free Datasheet http://www.datasheet4u.com/
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