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PDF KML0D6NP20EA Data sheet ( Hoja de datos )

Número de pieza KML0D6NP20EA
Descripción N and P-Ch Trench MOSFET
Fabricantes KEC 
Logotipo KEC Logotipo



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SEMICONDUCTOR
TECHNICAL DATA
General Description
It’s Mainly Suitable for Load Switching Cell Phones, Battery Powered
Systems and Level-Shifter.
KML0D6NP20EA
N and P-Ch Trench MOSFET
B
B1
FEATURES
N-Channel
: VDSS=20V, ID=600mA (RDS(ON)=0.70
: VDSS=20V, ID=500mA (RDS(ON)=0.85
: VDSS=20V, ID=350mA (RDS(ON)=1.25
P-Channel
: VDSS=-20V, ID=-400mA (RDS(ON)=1.2
: VDSS=-20V, ID=-300mA (RDS(ON)=1.6
: VDSS=-20V, ID=-150mA (RDS(ON)=2.7
@ VGS=4.5V).
@ VGS=2.5V).
@ VGS=1.8V).
@ VGS=-4.5V).
@ VGS=-2.5V).
@ VGS=-1.8V).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL N-Ch P-Ch
Drain-Source Voltage
Gate-Source Voltage
Drain Current
DC @TA=25
DC @TA=85
Pulsed
Source-Drain Diode Current
Drain Power Dissipation
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient
VDSS
VGSS
ID*
IDP
IS
PD*
Tj
Tstg
RthJA*
20 -20
66
515 -390
370 -280
650 -650
450 -450
280 280
150
-55 150
446
Note 1) *Surface Mounted on FR4 Board, t 5sec
UNIT
V
V
mA
mW
/W
1 6 DIM MILLIMETERS
A 1.6+_ 0.05
A1 1.0 +_ 0.05
2 5 B 1.6+_ 0.05
B1 1.2 +_ 0.05
3 4 C 0.50
D 0.2+_ 0.05
H 0.5+_ 0.05
J 0.12+_ 0.05
PP
P5
1. Source 1
2. Gate 1
3. Drain 2
4. Source 2
5. Gate 2
6. Drain 1
TES6
Marking
A1Type Name
Lot No.
PIN CONNECTION (TOP VIEW)
S1 1
G1 2
D2 3
6 D1
5 G2
4 S2
1
2
3
6
5
4
2008. 9. 10
Revision No : 3
1/6
Free Datasheet http://www.datasheet4u.com/

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KML0D6NP20EA pdf
KML0D6NP20EA
P-Channel
1.0
VGS=5V
0.8
Fig 1. ID - VDS
VGS=4V
VGS=3V
VGS=2.5V
0.6
VGS=2V
0.4
0.2 VGS=1.8V
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Drain - Source Voltage VDS (V)
Fig 3. ID - VGS
1.0
-55 C
0.8
25 C
0.6
0.4 TC=125 C
0.2
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Gate - Source Voltage VGS (V)
Fig 5. Vth - Tj
0.3
ID = 250µA
0.2
0.1
-0.0
-0.1
-0.2
-0.3
-50 -25 0 25 50 75 100 125
Junction Temperature Tj ( C)
2008. 9. 10
Revision No : 3
4.0
3.2
2.4
1.6
0.8
0.0
0
Fig 2. RDS(on) - ID
VGS=1.8V
VGS=2.5V
VGS=4.5V
0.2 0.4 0.6 0.8 1.0
Drain - Current ID (A)
Fig 4. RDS(ON) - Tj
1.6
VGS = 4.5V
ID = 350mA
1.4
1.2
1.0
0.8
0.6
-50 -25
0
25 50 75 100 125
Junction Temperature Tj ( C)
1000
100
10
Fig 6. IDR - VSDF
Tj=125 C
25 C
-55 C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Source - Drain Forward Voltage VSDF (V)
5/6
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