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IRFML8244TRPBF fiches techniques PDF

International Rectifier - HEXFET Power MOSFET

Numéro de référence IRFML8244TRPBF
Description HEXFET Power MOSFET
Fabricant International Rectifier 
Logo International Rectifier 





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IRFML8244TRPBF fiche technique
VDS
VGS Max
RDS(on) max
(@VGS = 10V)
RDS(on) max
(@VGS = 4.5V)
25
± 20
24
41
V
V
m
m
PD - 97587A
IRFML8244TRPbF
HEXFET® Power MOSFET
*
6
'
Micro3TM (SOT-23)
IRFML8244TRPbF
Application(s)
Load/ System Switch
Features and Benefits
Features
Low RDS(on) ( 24m)
Industry-standard pinout
Compatible with existing Surface Mount Techniques
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Consumer qualification
results in
Benefits
Lower switching losses
Multi-vendor compatibility
Easier manufacturing
Environmentally friendly
Increased reliability
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TA = 25°C
Maximum Power Dissipation
PD @TA = 70°C
Maximum Power Dissipation
Linear Derating Factor
VGS
TJ, TSTG
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
Symbol
Parameter
eRJA Junction-to-Ambient
fRJA Junction-to-Ambient (t<10s)
Max.
25
5.8
4.6
24
1.25
0.80
0.01
± 20
-55 to + 150
Typ.
–––
–––
Max.
100
99
Units
V
A
W
W/°C
V
°C
Units
°C/W
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes  through „ are on page 10
www.irf.com
1
02/29/12
Free Datasheet http://www.datasheet4u.com/

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