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PDF 2SA1977 Data sheet ( Hoja de datos )
| Número de pieza | 2SA1977 | |
| Descripción | PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER | |
| Fabricantes | NEC | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SA1977 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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PRELIMDINAATRAY SDHAETEAT SHEET
Silicon Transistor
2SA1977
PNP EPITAXIAL SILICON TRANSISTOR
MICROWAVE AMPLIFIER
FEATURES
PACKAGE DIMENSION (in millimeters)
• High fT
2.8+_0.2
fT = 8.5 GHz TYP.
• High gain
1.5
0.65
+0.1
–0.15
| S21e | 2 = 12.0 dB TYP. @f = 1.0 GHz, VCE = −8 V, IC = −20 mA
• High-speed switching characterstics
2
• Equivalent NPN transistor is the 2SC3583.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
13
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCB0
VCE0
VEB0
IC
PT
Tj
Tstg
Rating
−20
−12
−3.0
−50
200
150
−65 to +150
Unit
V
V
V
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
Marking
PIN CONNECTIONS
1: Emitter
2: Base
3: Collector Marking; T92
Parameter
Symbol
Test Conditions
MIN. TYP. MAX.
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Collector Capacitance
Insertion Power Gain
Noise Figure
ICB0
IEB0
hFE
fT
Cre*
| S21e | 2
NF
VCB = −10 V
VEB = −1 V
VCE = −8 V, IC = −20 mA
VCE = −8 V, IC = −20 mA, f = 1 GHz
VCB = −10 V, IE = 0, f = 1 MHz
VCE = −8 V, IC = −20 mA, f = 1.0 GHz
VCE = −8 V, IC = −3 mA, f = 1 GHz
20
6.0
8.0
8.5
0.5
12.0
1.5
−0.1
−0.1
100
1
3
* Mesured by a 3-terminal bridge. Emitter and Case should be connected to the guard terminal.
Unit
µA
µA
GHz
pF
dB
dB
hFE Classification
Rank
Marking
hFE
FB
T92
20 to 100
Document No. P10925EJ1V0DS00 (1st edition)
Date Published April 1996 P
Printed in Japan
© 1996
1 page  
INSERTION GAIN vs. FREQUENCY
15
VCE = –8 V
f = 1 GHz
10
5
0
–1 –10 –100
IC - Collector Current - mA
2SA1977
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
10
VCE = –8 V
8
6
4
2
0
–1 –10 –100
IC - Collector Current - mA
OUTPUT CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
1.5
f = 1 MHz
1
0.5
0
–1 –10 –100
VCB - Collector to Base Voltage - V
35
30
25
20
15
10
5
0
–5
–10
–15
0.1
INSERTION GAIN vs. FREQUENCY
VCE = –8 V
IC = –20 mA
0.2 0.3 0.4 0.5
1.0
f - Frequency - GHz
2.0 3.0
5
5 Page 
S-PARAMETER
(VCE = 8 V, IC = 20 mA, Zo = 50 Ω)
f
MHz
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
S11
MAG
ANG
0.310
− 47.6
0.243
− 82.1
0.205 − 107
0.165 − 125
0.172 − 140
0.169 − 153
0.166 − 163
0.169 − 173
0.172
179
0.176
172
0.182
166
0.188
160
0.194
156
0.202
151
0.209
147
0.217
144
0.224
140
0.233
137
0.240
134
0.247
132
0.255
129
0.263
126
0.272
124
0.278
122
0.286
120
S21
MAG
ANG
20.39
144.
14.87
123.
11.25
111.
8.95
102.
7.329
96.6
6.232
91.6
5.414
87.5
4.778
83.5
4.3 80.2
3.902
77.1
3.576
74.1
3.310
71.2
3.080
68.7
2.875
66.0
2.711
63.4
2.564
61.0
2.431
58.6
2.315
56.4
2.212
54.2
2.123
52.0
2.037
49.8
1.965
47.7
1.896
45.7
1.833
43.7
1.778
41.7
S12
MAG
ANG
0.0218
77.0
0.0375
72.7
0.0514
71.4
0.0643
71.6
0.0777
71.5
0.0909
71.5
0.104
71.0
0.117
70.6
0.130
70.0
0.143
69.3
0.156
68.6
0.169
67.7
0.182
66.7
0.195
66.0
0.208
64.9
0.221
63.9
0.234
62.8
0.247
61.7
0.259
60.8
0.272
59.8
0.284
58.3
0.296
57.2
0.309
56.1
0.321
54.8
0.332
53.7
2SA1977
S22
MAG
ANG
0.798 − 25.2
0.611 − 37.8
0.488 − 43.1
0.417 − 45.1
0.365 − 45.7
0.331 − 45.8
0.308 − 46.5
0.289 − 47.3
0.274 − 47.9
0.262 − 49.1
0.251 − 50.4
0.244 − 51.5
0.235 − 53.7
0.227 − 55.6
0.221 − 57.0
0.213 − 59.5
0.209 − 61.7
0.204 − 64.7
0.197 − 67.9
0.193 − 70.0
0.188 − 73.3
0.183 − 77.5
0.179 − 80.1
0.177 − 84.0
0.171 − 87.7
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet 2SA1977.PDF ] | |
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