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Numéro de référence | 2SA1971 | ||
Description | SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR | ||
Fabricant | Toshiba Semiconductor | ||
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1 Page
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1971
High-Voltage Switching Applications
2SA1971
Unit: mm
• High breakdown voltage: VCEO = −400 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Ta = 25°C
Ta = 25°C
(Note 1)
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
−400
−400
−7
−0.5
−1
−0.25
500
1000
150
−55 to 150
Note 1: Mounted on a ceramic substrate 250 mm2 × 0.8 t
V
V
V
A
A
mW
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2009-12-21
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Pages | Pages 4 | ||
Télécharger | [ 2SA1971 ] |
No | Description détaillée | Fabricant |
2SA1971 | SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR | Toshiba Semiconductor |
2SA1972 | TRANSISTOR (HIGH VOLTAGE SWITCHING APPLICATIONS) | Toshiba Semiconductor |
2SA1973 | DC/DC Converter Applications | Sanyo Semicon Device |
2SA1977 | PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER | NEC |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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