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Toshiba Semiconductor - SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR

Numéro de référence 2SA1971
Description SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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2SA1971 fiche technique
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1971
High-Voltage Switching Applications
2SA1971
Unit: mm
High breakdown voltage: VCEO = 400 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Ta = 25°C
Ta = 25°C
(Note 1)
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
400
400
7
0.5
1
0.25
500
1000
150
55 to 150
Note 1: Mounted on a ceramic substrate 250 mm2 × 0.8 t
V
V
V
A
A
mW
°C
°C
JEDEC
JEITA
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2009-12-21

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