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PDF 2SA1967 Data sheet ( Hoja de datos )
| Número de pieza | 2SA1967 | |
| Descripción | NPN Triple Diffused Planar Silicon Transistor | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Ordering number:5182
NPN Triple Diffused Planar Silicon Transistor
2SA1967
High-Voltage Amplifier,
High-Voltage Switching Applications
Features
· High breakdown voltage (VCEO min=–900V).
· Small Cob (Cob typ=2.2pF).
· High reliability (Adoption of HVP process).
Package Dimensions
unit:mm
2010C
[2SA1967]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Symbol
Conditions
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCB=–900V, IE=0
VEB=–5V, IC=0
VCE=–5V, IC=–1mA
VCE=–10V, IC=–1mA
VCB=–100V, f=1MHz
IC=–500µA, IB=–100µA
IC=–500µA, IB=–100µA
IC=–100µA, IE=0
IC=–1mA, RBE=∞
IE=–100µA, IC=0
JEDEC : TO-220AB
EIAJ : SC46
1 : Base
2 : Collector
3 : Emitter
Ratings
–900
–900
–7
–10
–30
1.75
150
–55 to +150
Unit
V
V
V
mA
mA
W
˚C
˚C
Ratings
min typ
20
6
2.2
–900
–900
–7
max
–1
–1
50
–1
–1.5
Unit
µA
µA
MHz
pF
V
V
V
V
V
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/92095YK (KOTO) TA-0444 No.5182–1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SA1967.PDF ] | |
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