|
|
Numéro de référence | 23NM60N | ||
Description | STB23NM60N | ||
Fabricant | STMicroelectronics | ||
Logo | |||
1 Page
STB23NM60N-STF23NM60N
STI23NM60N-STP23NM60N-STW23NM60N
N-channel 600 V - 0.150 Ω - 19 A - D2PAK - I2PAK - TO-220/FP
TO-247, second generation MDmesh™ Power MOSFET
Features
Type
VDSS
RDS(on)
(@Tjmax) max
ID
STB23NM60N
STI23NM60N
STF23NM60N
STP23NM60N
STW23NM60N
650 V
0.180 Ω
19 A
19 A
19 A (1)
19 A
19 A
1. Limited only by maximum temperature allowed
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
Description
This series of devices is designed using the
second generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
3
1
D²PAK
3
2
1
TO-220
123
I²PAK
3
2
1
TO-247
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STB23NM60N
STI23NM60N
STF23NM60N
STP23NM60N
STW23NM60N
Marking
23NM60N
23NM60N
23NM60N
23NM60N
23NM60N
Package
D²PAK
I²PAK
TO-220FP
TO-220
TO-247
Packaging
Tape and reel
Tube
Tube
Tube
Tube
March 2008
Rev 3
1/19
www.st.com
19
Free Datasheet http://www.datasheet4u.com/
|
|||
Pages | Pages 19 | ||
Télécharger | [ 23NM60N ] |
No | Description détaillée | Fabricant |
23NM60N | STB23NM60N | STMicroelectronics |
23NM60ND | STB23NM60ND | STMicroelectronics |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |