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ROHM Semiconductor - High-speed Switching Transistor (−60V/ −5A)

Numéro de référence 2SA1952
Description High-speed Switching Transistor (−60V/ −5A)
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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2SA1952 fiche technique
Transistors
2SA1952
High-speed Switching Transistor (60V, 5A)
2SA1952
zFeatures
1) High speed switching. (tf : Typ. 0.15 µs at IC = −3A)
2) Low VCE(sat). (Typ. 0.2V at IC/IB = −3/0.15A)
3) Wide SOA. (safe operating area)
4) Complements the 2SC5103.
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
100
60
5
5
10
1
10
150
55~+150
Unit
V
V
V
A
A(Pulse)
W
W(Tc=25°C)
°C
°C
zExternal dimensions (Units : mm)
2SA1952
5.5 1.5
0.9
0.8Min.
ROHM : CPT3
EIAJ : SC-63
1.5
2.5
9.5
C0.5
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
zPackaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit (pieces)
2SA1952
CPT3
Q
TL
2500
zElectrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
VBE(sat)
hFE
fT
Cob
ton
tstg
tf
Min.
100
60
5
120
Typ.
80
130
Max.
10
10
0.3
0.5
1.2
1.5
270
0.3
1.5
0.3
Unit
V
V
V
µA
µA
V
V
V
V
MHz
pF
µs
µs
µs
Conditions
IC = 50µA
IC = 1mA
IE = 50µA
VCB = 100V
VEB = 5V
IC/IB=3A/0.15A
IC/IB=4A/0.2A
IC/IB=3A/0.15A
IC/IB=4A/0.2A
VCE = 2V , IC = 1A
VCE = 10V , IE = 0.5A , f = 30MHz
VCB = 10V , IE = 0A , f = 1MHz
IC = 3A , RL = 10
IB1 = IB2 = 0.15A
VCC 30V

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