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Renesas - P-channel MOSFEF

Numéro de référence UPA2812T1L
Description P-channel MOSFEF
Fabricant Renesas 
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UPA2812T1L fiche technique
μPA2812T1L
P-channel MOSFEF
–30 V, –30 A, 4.8 mΩ
Data Sheet
R07DS0762EJ0101
Rev.1.01
May 28, 2013
Description
The μPA2812T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management
applications of portable equipment.
Features
VDSS = 30 V (TA = 25°C)
Low on-state resistance
RDS(on) = 4.8 mΩ MAX. (VGS = 10 V, ID = 30 A)
4.5 V Gate-drive available
Small & thin type surface mount package with heat spreader
Pb-free and Halogen free
8-pin HVSON(3333)
Ordering Information
Part No.
Lead Plating
Packing
Package
μPA2812T1L-E2-AT *1
Pure Sn
8-pin HVSON (3333)
Tape 3000 p/reel
typ. 0.028 g
Note: 1. Pb-free (This product does not contain Pb in external electrode and other parts.)
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) 1
Total Power Dissipation 2
Total Power Dissipation (PW = 10 sec) 2
Total Power Dissipation (TC = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current 3
Single Avalanche Energy 3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
PT3
Tch
Tstg
IAS
EAS
Ratings
30
m20
m30
m120
1.5
3.8
52
150
55 to +150
25
62
Unit
V
V
A
A
W
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Ambient Thermal Resistance 2
Channel to Case (Drain) Thermal Resistance
Rth(ch-A)
Rth(ch-C)
83.3
2.4
°C/W
°C/W
Notes: 1. PW 10 μs, Duty Cycle 1%
2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 0 V, L = 100 μH
R07DS0762EJ01001 Rev.1.01
May 28, 2013
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