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PDF UPA2630T1R Data sheet ( Hoja de datos )

Número de pieza UPA2630T1R
Descripción P-CHANNEL MOSFET
Fabricantes Renesas 
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μPA2630T1R
P-CHANNEL MOSFET
–12 V, –7.0 A, 28 mΩ
Data Sheet
R07DS0990EJ0100
Rev.1.00
Dec 27, 2012
Description
The μPA2630T1R is P-channel MOS Field Effect Transistors for switching application.
This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications
such as power switch of portable machine and so on.
Features
1.8V drive available
Low on-state resistance
RDS (on)1 = 28 mΩ MAX. (VGS = 4.5 V, ID = 3.5 A)
RDS (on)2 = 35 mΩ MAX. (VGS = 2.5 V, ID = 3.5 A)
RDS (on)2 = 59 mΩ MAX. (VGS = 1.8 V, ID = 3.5 A)
Built-in gate protection diode
Lead-free and Halogen-free
6pinHUSON2020
Ordering Information
Part Number
Package
μPA2630T1R-E2-AX1
6pinHUSON2020
Note: 1.Pb-free (This product does not contain Pb in the external electrode and other parts.)
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
Ratings
Unit
Drain to Source Voltage (VGS = 0 V)
VDSS
–12 V
Gate to Source Voltage (VDS = 0 V)
VGSS
m8 V
Drain Current (DC)
Drain Current (pulse) 1
Total Power Dissipation (5 s) 2
ID(DC)
ID(pulse)
PT
m7.0 A
m28 A
2.5 W
Channel Temperature
Tch 150 °C
Storage Temperature
TSTG
–55 to +150 °C
Notes: 1. PW10 μs, Duty Cycle1%
2. Mounted on glass epoxy board of 25.4mm x 25.4mm x 0.8mmt
R07DS0990EJ0100 Rev.1.00
Dec 27, 2012
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/

1 page




UPA2630T1R pdf
μPA2630T1R
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
60
Pulsed
50 ID = -3.5A
40 VGS = -1.8V
-2.5V
30
-4.5V
20
10
0
-50 0 50 100 150
Tch - Channel Temperature - °C
1000
100
10
SWITCHING CHARACTERISTICS
td(off)
tf
VDD = -6.0V
VGS = -4.0V
RG = 6Ω
td(on)
tr
1
-0.1 -1 -10 -100
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
Pulsed
VGS=-4.5V
10
0V
CAPACITANCE vs. DRAIN TO SOURCE
VOLTAGE
10,000
1,000
Ciss
100
Coss
Crss
VGS = 0V
f = 1.0MHz
10
-0.01
-0.1
-1
-10 -100
VDS – Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-15 -6
VDS
-10
VDD= -12V
-9.6V
-6V
-5
VGS -4
-3
-5 -2
-1
ID=-7A
00
0 2 4 6 8 10 12 14
QG - Gate Charge - nC
1
0 0.5 1 1.5
VF(S–D) - Drain to Source Voltage - V
R07DS0990EJ0100 Rev.1.00
Dec 27, 2012
Page 5 of 6
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