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PDF RJK5030DPP-M0 Data sheet ( Hoja de datos )
| Número de pieza | RJK5030DPP-M0 | |
| Descripción | High Speed Power Switching | |
| Fabricantes | Renesas | |
| Logotipo |  |
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RJK5030DPP-M0
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-state resistance
RDS(on) = 1.3 typ. (at ID = 2 A, VGS = 10 V, Ta = 25C)
High speed switching
Outline
RENESAS Package code: PRSS0003AF-A
(Package name: TO-220FL)
1
23
G
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Avalanche current
Channel dissipation
VDSS
VGSS
ID
ID (pulse) Note1
IAPNote3
Pch Note 2
Channel to case thermal Impedance
ch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Pulse width limited by safe operating area.
2. Value at Tc = 25C
3. STch = 25C, Tch 150C
Preliminary Datasheet
R07DS0227EJ0100
Rev.1.00
Dec 14, 2010
D
1. Gate
2. Drain
3. Source
S
Value
500
30
5
20
5
28.5
4.38
150
–55 to +150
(Ta = 25C)
Unit
V
V
A
A
A
W
C/W
C
C
R07DS0227EJ0100 Rev.1.00
Dec 14, 2010
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/
1 page  
RJK5030DPP-M0
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1
1
0.5
Tc = 25°C
0.3 0.2
0.1
0.1 0.05
0.02
0.03
0.01
1shot
pulse
0.01
10 μ 100 μ
θch – c(t) = γ s (t) • θ ch – c
θch – c = 4.38°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
Pulse Width PW (s)
1
10
Preliminary
Switching Time Test Circuit
Vin Monitor
10 Ω
Vin
10 V
D.U.T.
Vout
Monitor
RL
VDD
= 200 V
Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
tr
90%
td(off)
tf
R07DS0227EJ0100 Rev.1.00
Dec 14, 2010
Page 5 of 6
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RJK5030DPP-M0.PDF ] | |
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