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PDF RJK4007DPP-M0 Data sheet ( Hoja de datos )

Número de pieza RJK4007DPP-M0
Descripción High Speed Power Switching
Fabricantes Renesas 
Logotipo Renesas Logotipo



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No Preview Available ! RJK4007DPP-M0 Hoja de datos, Descripción, Manual

RJK4007DPP-M0
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS(on) = 0.47 typ. (at ID = 7 A, VGS = 10 V, Ta = 25C)
Low leakage current
High speed switching
Outline
RENESAS Package code: PRSS0003AF-A
(Package name: TO-220FL)
1
23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. Single pulse
2. Value at Tc = 25C
3. STch = 25C, Tch 150C
G
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
ch-c
Tch
Tstg
Preliminary Datasheet
R07DS0229EJ0100
Rev.1.00
Dec 15, 2010
D
1. Gate
2. Drain
3. Source
S
Ratings
400
30
7.6
30
7.6
30
14
26.1
32
3.9
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0229EJ0100 Rev.1.00
Dec 15, 2010
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/

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RJK4007DPP-M0 pdf
RJK4007DPP-M0
Preliminary
Normalized Transient Thermal Impedance vs. Pulse Width
10
Tc = 25°C
D=1
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
1shot
pulse
0.001
10 μ
100 μ
θch – c (t) = γ s (t) • θch – c
θch – c = 3.9°C/W, Tc = 25°C
PDM
D = PW
T
PW
T
1m
10 m
100 m
1
Pulse Width PW (s)
10 100
Switching Time Test Circuit
Vin Monitor
25 Ω
Vin
10 V
D.U.T.
Vout
Monitor
RL
VDD
=200 V
Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
tr
90%
td(off)
tf
R07DS0229EJ0100 Rev.1.00
Dec 15, 2010
Page 5 of 6
Free Datasheet http://www.datasheet4u.com/

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