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PDF RJK4002DPP-M0 Data sheet ( Hoja de datos )
| Número de pieza | RJK4002DPP-M0 | |
| Descripción | High Speed Power Switching | |
| Fabricantes | Renesas | |
| Logotipo |  |
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RJK4002DPP-M0
400V - 3A - MOS FET
High Speed Power Switching
Features
Low on-state resistance
RDS(on) = 2.4 typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C)
High speed switching
Outline
RENESAS Package code: PRSS0003AF-A
(Package name: TO-220FL)
1
23
G
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
Drain current
Drain peak current
VGSS
ID Note4
ID(pulse) Note1
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
IDR
IDR(pulse) Note1
IAPNote3
EARNote3
Pch Note 2
Channel to case thermal Impedance
ch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 ms, duty cycle 1 %
2. Value at Tc = 25C
3. STch = 25C, Tch 150C
4. Pulse width limited by safe operating area.
Preliminary Datasheet
R07DS0551EJ0200
Rev.2.00
Aug 03, 2012
D
1. Gate
2. Drain
3. Source
S
Value
400
30
3
6
3
6
2.5
0.357
20
6.25
150
–55 to +150
(Ta = 25C)
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0551EJ0200 Rev.2.00
Aug 03, 2012
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/
1 page  
RJK4002DPP-M0
Preliminary
Normalized Transient Thermal Impedance vs. Pulse Width
10
1 D=1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
1shot
pulse
0.001
10 μ
100 μ
Tc = 25°C
θch – c(t) = γ s (t) • θ ch – c
θch – c = 6.25°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
Pulse Width PW (s)
1
10 100
Switching Time Test Circuit
Vin Monitor
10 Ω
Vin
10 V
D.U.T.
Vout
Monitor
RL
VDD
= 200 V
Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
tr
90%
td(off)
tf
R07DS0551EJ0200 Rev.2.00
Aug 03, 2012
Page 5 of 6
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RJK4002DPP-M0.PDF ] | |
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