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Numéro de référence | IRFHM792TR2PBF | ||
Description | HEXFET Power MOSFET | ||
Fabricant | International Rectifier | ||
Logo | |||
1 Page
PD - 96368A
IRFHM792TRPbF
IRFHM792TR2PbF
VDS
Vgs max
RDS(on) max
(@VGS = 10V)
Qg typ
ID
(@Tc(Bottom) = 25°C)
100
± 20
195
4.2
h3.4
V
V
mΩ
nC
A
TOP VIEW
D DD D
8 765
1 234
S GS G
HEXFET® Power MOSFET
SG
G
S
D
D
D
D
D
D
PQFN Dual 3.3X3.3 mm
Applications
• DC-DC Primary Switch
• 48V Battery Monitoring
Features and Benefits
Features
Low RDSon (<195mΩ)
Low Thermal Resistance to PCB (< 12°C/W)
Low Profile (<1.2mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Benefits
Lower Conduction Losses
Enable better thermal dissipation
results in Increased Power Density
⇒ Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFHM792TRPBF
IRFHM792TR2PBF
Package Type
PQFN Dual 3.3mm x 3.3mm
PQFN Dual 3.3mm x 3.3mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V (Wirebond Limited)
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Notes through are on page 9
www.irf.com
Max.
100
± 20
2.3
1.8
4.8 h
3.1
3.4h
14
2.3
10.4
0.018
-55 to + 150
Units
V
A
W
W/°C
°C
1
Free Datasheet http://w0w5/w1.0d/a1t1asheet4u.com/
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Pages | Pages 9 | ||
Télécharger | [ IRFHM792TR2PBF ] |
No | Description détaillée | Fabricant |
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