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PDF IRF9395MTRPBF Data sheet ( Hoja de datos )
| Número de pieza | IRF9395MTRPBF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 96332A
IRF9395MPbF
IRF9395MTRPbF
DirectFET dual P-Channel Power MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
Applications
l Isolation Switch for Input Power or Battery Application
-30V max ±20V max 5.3mΩ@-10V 9.0mΩ@-4.5V
Qg tot Qgd Qgs2 Qrr Qoss Vgs(th)
Features and Benefits
32nC 15nC 3.2nC 62nC 23nC -1.8V
l Environmentaly Friendly Product
Q1-Q2
l RoHs Compliant Containing no Lead,
no Bromide and no Halogen
l Dual Common-Drain P-Channel MOSFETs Provides
High Level of Integration and Very Low RDS(on)
G
S
D
S
G
S
D
S
MC
DirectFET ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT MP MC
Description
The IRF9395MTRPbF combines the latest HEXFET® P-Channel Power MOSFET Silicon technology with the advanced DirectFETTM packaging
to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
Orderable part number
IRF9395MTRPbF
IRF9395MTR1PbF
Package Type
DirectFET Medium Can
DirectFET Medium Can
Standard Pack
Form
Quantity
Tape and Reel
4800
Tape and Reel
1000
Note
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
Max.
-30
±20
-14
-11
-75
-110
Units
V
A
24
20 ID = -14A
16
12
8 TJ = 125°C
4 TJ = 25°C
0
2 4 6 8 10 12 14 16 18 20
-VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
14.0
12.0 ID= -11A
10.0
8.0
VDS= -24V
VDS= -15V
VDS= -6V
6.0
4.0
2.0
0.0
0
20 40 60 80
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
1
Free Datasheet http://w1w2/w2./d1a0tasheet4u.com/
1 page  
1000
100
TJ = 150°C
TJ = 25°C
TJ = -40°C
10
1
VGS = 0V
0.1
0.2 0.4 0.6 0.8 1.0 1.2
-VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
15
IRF9395MTRPbF
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100µs
1ms
10
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0.01
0.1
DC
1
10ms
10
100
-VDS, Drain-to-Source Voltage (V)
Fig 11. Maximum Safe Operating Area
3.0
12 2.5
9 2.0
6
3
0
25
50 75 100 125
TC , Case Temperature (°C)
150
Fig 12. Maximum Drain Current vs. Case Temperature
1200
1000
800
1.5
ID = 50µA
ID = 250µA
1.0 ID = 1.0mA
ID = 1.0A
0.5
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
ID
TOP -1.2A
-1.9A
BOTTOM -11A
600
400
200
www.irf.com
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
5
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF9395MTRPBF.PDF ] | |
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