|
|
PDF IRF9389PBF Data sheet ( Hoja de datos )
| Número de pieza | IRF9389PBF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRF9389PBF (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
|
No Preview Available !
VDS
RDS(on) max
Qg (typical)
ID
(@TA = 25°C)
N-CH
30
27
6.8
6.8
P-CH
-30
64
8.1
-4.6
V
m
nC
A
IRF9389PbF
HEXFET® Power MOSFET
N-CHANNEL MOSFET
S1 1
8 D1
G1 2
7 D1
S2 3
6 D2
G2 4
5 D2
P-CHANNEL MOSFET
Top View
SO-8
Applications
l High and Low Side Switches for Inverter
l High and Low Side Switches for Generic Half-Bridge
Features
Benefits
High and low-side MOSFETs in a single package
Increased power density
High-side P-Channel MOSFET
Easier drive circuitry
Industry-standard pinout
results in Multi-vendor compatibility
Compatible with existing surface mount techniques
RoHS compliant containing no Lead, no Bromide and no Halogen
Easier manufacturing
Environmentally friendlier
MSL1, Consumer qualification
Increased reliability
Base Part Number Package Type
IRF9389PbF
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable part number
IRF9389PbF
IRF9389TRPbF
Absolute Maximum Ratings
Parameter
VGS Gate-to-Source Voltage
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C
IDM
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
PD @TA = 25°C Power Dissipation
PD @TA = 70°C Power Dissipation
Linear Derating Factor
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
fRJL
eRJA
Junction-to-Drain Lead
Junction-to-Ambient
Max.
N-Channel P-Channel
±20 ±20
6.8 -4.6
5.4 -3.7
34 -23
2.0
1.3
0.016
-55 to + 150
Units
V
A
W
W/°C
°C
Typ.
–––
–––
Max
20
62.5
Units
°C/W
1 www.irf.com © 2012 International Rectifier
January 14, 2013
Free Datasheet http://www.datasheet4u.com/
1 page  
IRF9389PbF
N-Channel
7
6
5
4
3
2
1
0
25
50 75 100 125
TA , Ambient Temperature (°C)
150
VDS
VGS
RG
VGS
Pulse Width µs
Duty Factor
RD
D.U.T.
+
-
VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
Fig 9. Maximum Drain Current vs.
Ambient Temperature
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
100
ID = 6.8A
80
60
40
20
2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
120
110
100
90
80
70
60
50
40
30
20
0
Vgs = 4.5V
Vgs = 10V
5 10 15 20 25 30 35 40 45
ID, Drain Current (A)
Fig 11. Typical On-Resistance vs. Gate
Voltage
5 www.irf.com © 2012 International Rectifier
Fig 12. Typical On-Resistance vs. Drain
Current
January 14, 2013
Free Datasheet http://www.datasheet4u.com/
5 Page 
P-Channel
IRF9389PbF
2.2
2.0
1.8
1.6
1.4 ID = -10μA
1.2
1.0
0.8
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 29. Threshold Voltage vs. Temperature
20000
16000
12000
8000
4000
0
1E-8
1E-7
1E-6 1E-5 1E-4
Time (sec)
1E-3
1E-2
Fig 30. Typical Power vs. Time
QGS
VG
QG
QGD
Charge
Fig 31a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50K
12V .2F
.3F
D.U.T.
-
+VDS
VGS
-3mA
IG ID
Current Sampling Resistors
Fig 31b. Gate Charge Test Circuit
11 www.irf.com © 2012 International Rectifier
January 14, 2013
Free Datasheet http://www.datasheet4u.com/
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet IRF9389PBF.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRF9389PBF | HEXFET Power MOSFET | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |