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PDF IRF9310PBF Data sheet ( Hoja de datos )
| Número de pieza | IRF9310PBF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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VDS
RDS(on) max
(@VGS = 10V)
ID
(@TA = 25°C)
-30 V
4.6 mΩ
-20 A
6
6
6
*
Applications
• Charge and Discharge Switch for Notebook PC Battery Application
PD - 97437A
IRF9310PbF
HEXFET® Power MOSFET
'
'
'
'
SO-8
Features and Benefits
Features
Low RDSon (≤ 4.6mΩ)
Industry-Standard SO8 Package
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Resulting Benefits
Lower Conduction Losses
results in
⇒
Multi-Vendor Compatibility
Environmentally Friendlier
Orderable part number
IRF9310PbF
IRF9310TRPbF
Package Type
SO8
SO8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Note
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
fPower Dissipation
fPower Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Notes through
are on page 2
www.irf.com
Max.
-30
± 20
-20
-16
-160
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
1
Free Datasheet http0:/3//w1w9/w2.0d1a0tasheet4u.com/
1 page  
12
ID = -20A
10
8
6 TJ = 125°C
4
TJ = 25°C
2
2 4 6 8 10 12 14 16 18 20
-VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
2700
2400
2100
1800
ID
TOP -1.8A
-2.7A
BOTTOM -16A
1500
1200
900
600
300
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
IRF9310PbF
14
12
10
8 VGS = -4.5V
6
VGS = -10V
4
2
0 20 40 60 80 100 120 140 160
-ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
1000
800
600
400
200
0
1E-5
1E-4
1E-3
1E-2
1E-1
Time (sec)
Fig 16. Typical Power vs. Time
1E+0
D.U.T * +
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
- • Low Leakage Inductance
+ Current Transformer
-
- +
RG
• di/dt controlled by RG
• Driver same type as D.U.T.
VDD
+
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
-
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
*VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
IInnductorr CCuurrernetnt
Forward Drop
Ripple ≤ 5%
VDD
ISD
* Reverse Polarity of D.U.T for P-Channel
* VGS = 5V for Logic Level Devices
Fig 17. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs
www.irf.com
5
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5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF9310PBF.PDF ] | |
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