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DMP21D0UFB4 fiches techniques PDF

Diodes - 20V P-CHANNEL ENHANCEMENT MODE MOSFET

Numéro de référence DMP21D0UFB4
Description 20V P-CHANNEL ENHANCEMENT MODE MOSFET
Fabricant Diodes 
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DMP21D0UFB4 fiche technique
A Product Line of
Diodes Incorporated
Product Summary
V(BR)DSS
-20V
RDS(on)
495mΩ @ VGS = -4.5V
690mΩ @ VGS = -2.5V
960mΩ @ VGS = -1.8V
ID @ TA = 25°C
-0.77A
-0.67A
-0.57A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Portable electronics
DMP21D0UFB4
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Footprint of just 0.6mm2 – thirteen times smaller than SOT23
0.4mm profile – ideal for low profile applications
Low Gate Threshold Voltage
Fast Switching Speed
“Lead Free”, RoHS Compliant (Note 1)
Halogen and Antimony Free. "Green" Device (Note 2)
ESD Protected Gate 3KV
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: DFN1006H4-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.001 grams (approximate)
DFN1006H4-3
Drain
ESD PROTECTED TO 3kV
Bottom View
S
D
G
Top View
Internal Schematic
Gate
Gate
Protection
Diode
Source
Equivalent Circuit
Ordering Information (Note 3)
Part Number
DMP21D0UFB4-7B
Marking
NO
Reel size (inches)
7
Notes:
1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Tape width (mm)
8
Quantity per reel
10,000
Marking Information
DMP21D0UFB4
Datasheet number: DS35279 Rev. 2 - 2
DMP21D0UFB4-7B
NO NO = Product Type Marking Code
Top View
Bar Denotes Gate
and Source Side
1 of 6
www.diodes.com
June 2011
© Diodes Incorporated
Free Datasheet http://www.datasheet4u.com/

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