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PDF DMP21D0UFB Data sheet ( Hoja de datos )

Número de pieza DMP21D0UFB
Descripción 20V P-CHANNEL ENHANCEMENT MODE MOSFET
Fabricantes Diodes 
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Product Summary
V(BR)DSS
-20V
RDS(on) Max
495mΩ @ VGS = -4.5V
690mΩ @ VGS = -2.5V
960mΩ @ VGS = -1.8V
ID Max
@ TA = 25°C
(Note 4)
-0.77A
-0.67A
-0.57A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Portable electronics
A Product Line of
Diodes Incorporated
DMP21D0UFB
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Footprint of just 0.6mm2 – thirteen times smaller than SOT23
Low Gate Threshold Voltage
Fast Switching Speed
“Lead Free”, RoHS Compliant (Note 1)
Halogen and Antimony Free. "Green" Device (Note 2)
ESD Protected Gate 3KV
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: DFN1006-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.001 grams (approximate)
DFN1006-3
Drain
ESD PROTECTED TO 3kV
Bottom View
S
D
G
Top View
Internal Schematic
Gate
Gate
Protection
Diode
Source
Equivalent Circuit
Ordering Information (Note 3)
Part Number
DMP21D0UFB-7B
Marking
NG
Reel size (inches)
7
Notes:
1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Tape width (mm)
8
Quantity per reel
10,000
Marking Information
DMP21D0UFB
Datasheet Number: DS35277 Rev. 2 - 2
DMP21D0UFB-7B
NG NG = Product Type Marking Code
Top View
Bar Denotes Gate
and Source Side
1 of 6
www.diodes.com
June 2011
© Diodes Incorporated
Free Datasheet http://www.datasheet4u.com/

1 page




DMP21D0UFB pdf
10,000
1,000
100
TA = 150°C
TA = 125°C
10 TA = 85°C
TA = 25°C
1
04
8 12 16 20
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 11 Typical Leakage Current vs. Drain-Source Voltage
100,000
10,000
1,000
TA = 125°C
TA = 150°C
100
10
1
TA = 85°C
TA = 25°C
TA = -55°C
0.1
02 468
VGS, GATE-SOURCE VOLTAGE (V)
Fig.13 Leakage Current vs. Gate-Source Voltage
Package Outline Dimensions
100,000
10,000
1,000
A Product Line of
Diodes Incorporated
DMP21D0UFB
TA = 125°C
TA = 150°C
100
10
1
TA = 85°C
TA = 25°C
TA = -55°C
0.1
02 468
VGS, GATE-SOURCE VOLTAGE (V)
Fig.12 Leakage Current vs. Gate-Source Voltage
A
A1
E b2
D
L2 L3
DMP21D0UFB
Datasheet Number: DS35277 Rev. 2 - 2
L1
b1
e
DFN1006-3
Dim Min Max Typ
A 0.47 0.53 0.50
A1 0 0.05 0.03
b1 0.10 0.20 0.15
b2 0.45 0.55 0.50
D 0.95 1.075 1.00
E 0.55 0.675 0.60
e ⎯ ⎯ 0.35
L1 0.20 0.30 0.25
L2 0.20 0.30 0.25
L3
0.40
All Dimensions in mm
5 of 6
www.diodes.com
June 2011
© Diodes Incorporated
Free Datasheet http://www.datasheet4u.com/

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