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DMP2160UFDB fiches techniques PDF

Diodes - DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Numéro de référence DMP2160UFDB
Description DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
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DMP2160UFDB fiche technique
Features
Low On-Resistance
70mΩ @VGS = -4.5V
85mΩ @VGS = -2.5V
86mΩ (typ) @VGS = -1.8V
Low Gate Threshold Voltage, -0.9V Max
Fast Switching Speed
Low Input/Output Leakage
Low Profile, 0.5mm Max Height
Lead Free/RoHS Compliant (Note 2)
"Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
DMP2160UFDB
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
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Mechanical Data
Case: DFN2020B-6
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.0065 grams (approximate)
DFN2020B-6
DG S
32 1
BOTTOM VIEW
45 6
S GD
TOP VIEW
Internal Schematic
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
1.4
89
-55 to +150
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current (Note 4)
Symbol
VDSS
VGSS
ID
IDM
Value
-20
±12
-3.8
-13
Notes:
1. Device mounted on FR-4 PCB, on minimum recommended, 2oz Copper pad layout.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Repetitive rating, pulse width limited by junction temperature.
Unit
W
°C/W
°C
Units
V
V
A
A
DMP2160UFDB
Document number: DS31643 Rev. 4 - 2
1 of 6
www.diodes.com
September 2009
© Diodes Incorporated
Free Datasheet http://www.dat

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