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Número de pieza | DMP1245UFCL | |
Descripción | 12V P-CHANNEL ENHANCEMENT MODE MOSFET | |
Fabricantes | Diodes | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de DMP1245UFCL (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! Summary
V(BR)DSS
-12V
RDS(on) max
29mΩ @VGS = -4.5V
45mΩ @VGS = -2.5V
60mΩ @VGS = -1.8V
100mΩ @VGS = -1.5V
ID max
-6.6 A
-5.3 A
-4.6 A
-3.5 A
Application
This device provides a high performance, low RDS(ON) P channel
MOSFETs in the thermally and space efficient X1-DFN1616-6
package. The low RDS(ON) of this MOSFET ensures conduction
losses are kept making it ideal for use as a:
• Battery disconnect switch
• Load switch for power management functions
X1-DFN1616-6
Type E
A Product Line of
Diodes Incorporated
DMP1245UFCL
12V P-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
• Typical off board profile of 0.5mm - ideally suited for thin
applications
• Low RDS(ON) – minimizes conduction losses
• PCB footprint of 2.56mm2
• 3kV ESD Protected Gate – protected against human borne
ESD
• “Lead-Free”, RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: X1-DFN1616-6 Type E
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Lead Free Plating (NiPdAu Finish over Copper leadframe).
• Terminals: Solderable per MIL-STD-202, Method 208
• Weight: 0.04 grams (approximate)
Pin 1
Drain
Top View
Bottom View
Gate
Gate
Protection
Diode
Source
Device symbol
Ordering Information (Note 3)
Product
DMP1245UFCL-7
Marking
P5
Reel size (inches)
7
Notes:
1. No purposefully added lead.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com
Tape width (mm)
8
Top View
Pin-Out
Quantity per reel
3,000
Marking Information
P5
YM
P5 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2011
Y
Jan Feb
12
DMP1245UFCL
Document number: DS35505 Rev. 1 - 2
2012
Z
Mar
3
2013
A
Apr May
45
2014
B
Jun Jul
67
1 of 7
www.diodes.com
2015
C
Aug
8
Sep
9
2016
D
Oct
O
2017
E
Nov Dec
ND
November 2011
© Diodes Incorporated
Free Datasheet http://www.datasheet4u.com/
1 page 1.4
1.2
1.0
0.8
0.6
ID = -1mA
0.4
0.2 ID = -250µA
0
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 10 Gate Threshold Variation vs. Ambient Temperature
100,000
10,000
TA = 150°C
TA = 125°C
1,000
TA = 85°C
100
10
TA = 25°C
1
0 2 4 6 8 10 12
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 Typical Drain-Source Leakage Current vs. Voltage
8
6
VDS = -10V
ID = -1A
4
2
A Product Line of
Diodes Incorporated
DMP1245UFCL
20
16
12
TA = 25°C
8
4
0
0.4
2,500
0.6 0.8 1
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 11 Diode Forward Voltage vs. Current
2,000
1,500
CISS
1,000
500
0
0
COSS
CRSS
4 8 12 16
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 13 Typical Junction Capacitance
20
0
0 5 10 15 20 25
Qg, TOTAL GATE CHARGE (nC)
Fig. 14 Gate-Charge Characteristics
DMP1245UFCL
Document number: DS35505 Rev. 1 - 2
30
5 of 7
www.diodes.com
November 2011
© Diodes Incorporated
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet DMP1245UFCL.PDF ] |
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